Temperature dependence of nonradiative recombination in low-band gap InxGa1−xAs/InAsyP1−y double heterostructures grown on InP substrates

Gfroerer, T. H.; Priestley, L. P.; Fairley, M. F.; Wanlass, M. W.

doi:10.1063/1.1586468

Cited by 35 publications

(23 citation statements)

References 15 publications

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“…[39][40] Recombining free carriers must have equal and opposite momenta, a condition that decreases in likelihood as the average thermal energy and hence the Fermi vector increases with temperature. 39 The last term in Equation 1 involves Auger recombination of an electron with a hole in which the band gap energy is transferred to a third charge carrier. 36 With these considerations the excess charge density was modeled by numerically solving the differential Equation 1 via a Runge-Kutta method and globally fitting to the experimental transient conductivity in Figures 1 and 2, by minimizing the chi-square deviation.…”

Section: Resultsmentioning

confidence: 99%

Radiatively Dominated Charge Carrier Recombination in Black Phosphorus

et al. 2016

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We show that black phosphorus is a highly efficient infrared emitter. To study the carrier dynamics, excess electron-hole pairs were generated in bulk black phosphorus by irradiation with 3 MeV electron pulses. The transient microwave conductivity due to excess charges was measured as a function of time for different initial charge densities at temperatures in the range 203-373 K. A new global analysis scheme, including the treatment of intrinsic carriers is provided, which shows that the recombination dynamics in black phosphorus, a low bandgap semiconductor, is strongly influenced by the presence of intrinsic carriers. The temperature dependence of the charge mobility and charge carrier decay via second-order radiative recombination is obtained from modeling of the experimental data. The combined electron and hole mobility was found to increase with temperature up to 250 K and decrease above that. Auger recombination is negligible for the studied densities of excess electron-hole pairs up to 2.5×10 17 cm -3 . For this density the major fraction of the excess electrons and holes undergoes radiative recombination. It is further inferred that for excess charge densities of the order of 10 18 cm -3 electrons and holes recombine with near unity radiative yield. The latter offers promising prospects for use of black phosphorus as efficient mid infrared emitter in devices.

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Section: Resultsmentioning

confidence: 99%

Radiatively Dominated Charge Carrier Recombination in Black Phosphorus

et al. 2016

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“…In the case of free electron-hole pair recombination a far stronger temperature dependence of the bimolecular recombination coefficient k 2 according to k 2 p (k B T) À3/2 would be expected. 33 For example from 4 to 200 K a decrease of the radiative rate by a factor of B350 in k 2 would result in a prolongation of the radiative decay time t rad (p1/k 2 ) by more than two orders in magnitude. This is clearly not reflected in the experimental results on the radiative lifetime and, in line with the findings above, rules out the presence and decay of electron-hole pairs.…”

Section: I(t)mentioning

confidence: 99%

Temperature dependent radiative and non-radiative recombination dynamics in CdSe–CdTe and CdTe–CdSe type II hetero nanoplatelets

Scott

Kickhöfel

Schoeps

et al. 2016

Phys. Chem. Chem. Phys.

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aWe investigate the temperature-dependent decay kinetics of type II CdSe-CdTe and CdTe-CdSe corelateral shell nanoplatelets. From a kinetic analysis of the photoluminescence (PL) decay and a measurement of the temperature dependent quantum yield we deduce the temperature dependence of the non-radiative and radiative lifetimes of hetero nanoplates. In line with the predictions of the giant oscillator strength effect in 2D we observe a strong increase of the radiative lifetime with temperature. This is attributed to an increase of the homogeneous transition linewidth with temperature. Comparing core only and hetero platelets we observe a significant prolongation of the radiative lifetime in type II platelets by two orders in magnitude while the quantum yield is barely affected. In a careful analysis of the PL decay transients we compare different recombination models, including electron hole pairs and exciton decay, being relevant for the applicability of those structures in photonic applications like solar cells or lasers. We conclude that the observed biexponential PL decay behavior in hetero platelets is predominately due to spatially indirect excitons being present at the hetero junction and not ionized e-h pair recombination.

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“…2) and compared with that of other InGaAs compositions. [2] As shown in Fig. 3, we find a strong exponential dependence on the reciprocal of the temperature (and a similar dependence on bandgap energy), which generally points to band-to-band Auger processes.…”

Section: Radiative Efficiencymentioning

confidence: 82%

Recombination in Low-Bandgap InGaAs

Gfroerer

Wanlass

2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

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We review our investigation of recombination in InxGa1-xAs with indium concentrations ranging between x = 0.53 (i.e., lattice-matched to InP) and x = 0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent subbandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallowacceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

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Temperature dependence of nonradiative recombination in low-band gap InxGa1−xAs/InAsyP1−y double heterostructures grown on InP substrates

Cited by 35 publications

References 15 publications

Radiatively Dominated Charge Carrier Recombination in Black Phosphorus

Radiatively Dominated Charge Carrier Recombination in Black Phosphorus

Temperature dependent radiative and non-radiative recombination dynamics in CdSe–CdTe and CdTe–CdSe type II hetero nanoplatelets

Recombination in Low-Bandgap InGaAs

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