Temperature dependence of luminescence coupling effect in InGaP/GaAs/Ge triple junction solar cells

Jeco, Bernice Mae F. Yu; Sogabe, Tomah; Ahsan, Nazmul; Okada, Yoshitaka

doi:10.1117/1.jpe.8.022602

Cited by 10 publications

(6 citation statements)

References 23 publications

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“…The uniformity of the LC current distribution in the LBIC maps is obtained by calculating the normalized current values. The normalized current uniformity is defined as 24,25 E Q -T A R G E T ; t e m p : i n t r a l i n k -; e 0 0 1 ; 1 1 7 ; 3 4 4…”

Section: Lbic Mapping Methodsmentioning

confidence: 99%

Luminescent coupling effect in InGaP/GaAs/InGaAs inverted metamorphic triple-junction solar cell

Thakur,

Yu Jeco-Espaldon,

Okada

2024

J. Photon. Energy

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The luminescent coupling (LC) effect is one of the strategies for further boosting the efficiency of multijunction solar cells by improving the current mismatch among subcells. This work examined the LC effect in III-V compound InGaP/GaAs/InGaAs inverted metamorphic triple-junction solar cell (IMM-3JSC) by the laser beam-induced current mapping characterization method. A strong LC effect in the bottom subcell of the IMM-3J sample was demonstrated with an LC yield of around 0.13 under 7 suns irradiance. In addition, by effectively homogenizing the LC effect, the bottom subcell of IMM-3JSCs may potentially gain a current density of ∼0.6 mA∕cm 2 at 10 suns irradiance.

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Section: Lbic Mapping Methodsmentioning

confidence: 99%

Luminescent coupling effect in InGaP/GaAs/InGaAs inverted metamorphic triple-junction solar cell

Thakur,

Yu Jeco-Espaldon,

Okada

2024

J. Photon. Energy

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“…was calculated to quantify the spatial uniformity of current production by inducing the LC effect 12,15 or by direct single-wavelength excitation on the current-limiting cell of the 3JSC samples before and after PQD film deposition. In this equation, the subscript x refers to the direct subcell (x: DS) or to the LC effect (x: LC) excitation, N is the total number of points in an LBIC map, J l is the current collected at a spot l, and J is the average subcell current obtained at all points on the map.…”

Section: Standard Deviation Of the Current Collectionmentioning

confidence: 99%

“…This was reported in past literature that specifically tackled the LC effect between these subcells in InGaP/GaAs/Ge 3JSC devices. [7][8][9]14,15 Collectively, the results from the LBIC measurements suggest that dip coating PQD on full III-V MJSCs is a potential solution for both current matching and homogenizing subcell current collection.…”

Section: Current Collection and Homogeneitymentioning

confidence: 99%

“…[2][3][4][5] Previous studies have reported that when this effect is made stronger through controlled external irradiation upon a higher bandgap subcell, larger current can be produced in the lower bandgap subcell. [6][7][8][9][10][11][12][13][14][15] However, the LC efficiency was found to saturate within 60% to 70% of radiative emission in the higher bandgap subcell. 16 The use of metal halide perovskite quantum dots (PQDs) could be a cost-effective way to enhance photon emission toward the current-limiting cell.…”

Section: Introductionmentioning

confidence: 99%

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Application of perovskite quantum dots in carrier redistribution in III-V multijunction solar cells with luminescent coupling effect

et al. 2020

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The luminescent coupling effect in a multijunction solar cell is known to help achieve current matching among subcells through carrier redistribution. We demonstrate the carrier redistribution in III-V multijunction solar cell devices using a moisture-resistant, all-inorganic perovskite quantum dot (PQD) film. This hydrophobic PQD film was applied on a full III-V multijunction solar cell device. This successfully demonstrated current redistribution vertically, shown by the increased current collection in the lower bandgap subcells, and laterally, as observed from improved current collection homogeneity in the lower bandgap subcell adjacent to the higher bandgap subcell where the luminescence originated. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…Thin film solar cells based on CdTe, copper indium gallium selenide (CIGS) or amorphous silicon have been developed as a cheaper alternative to crystalline silicon cells [2][3][4][5][6][7]. On the other hand, tandem cells, or multi-junction cells, as they are also called, were originally used for spacecrafts, where materials such as gallium-arsenide (GaAs) and germanium (Ge) substrates were combined for the first time to achieve high efficiencies [8][9][10]. In order to create cost-effective tandem cells, the most obvious way is to add new materials on top of conventional single-junction cells based on silicon or thin film materials such as CIGS.…”

Section: Introductionmentioning

confidence: 99%

Improved design of InGaP/GaAs//Si tandem solar cells

2021

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Optimizing any tandem solar cells design before making them experimentally is an important way of reducing development costs. Hence, in this work, we have used a complete analytical model that includes the important effects in the depletion regions of the III-V compound cells in order to simulate the behavior of two and four-terminal InGaP/GaAs//Si tandem solar cells for optimizing them. The design optimization procedure is described first, and then it is shown that the expected practical efficiencies at 1 sun (AM1.5 spectrum) for both two and four-terminal tandem cells can be around 40% when the appropriate thickness for each layer is used. The optimized design for both structures includes a double MgF2/ZnS anti-reflection layer (ARC). The results show that the optimum thicknesses are 130 (MgF2) and 60 nm (ZnS), respectively, while the optimum InGaP thickness is 220 nm and GaAs optimum thickness is 1800 nm for the four-terminal tandem on a HIT silicon solar cell (with total tandem efficiency around 39.8%). These results can be compared with the recent record experimental efficiency around 35.9% for this kind of solar cells. Therefore, triple junction InGaP/GaAs//Silicon tandem solar cells continue being very attractive for further development, using high efficiency HIT silicon cell as the bottom sub-cell.

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Temperature dependence of luminescence coupling effect in InGaP/GaAs/Ge triple junction solar cells

Cited by 10 publications

References 23 publications

Luminescent coupling effect in InGaP/GaAs/InGaAs inverted metamorphic triple-junction solar cell

Luminescent coupling effect in InGaP/GaAs/InGaAs inverted metamorphic triple-junction solar cell

Application of perovskite quantum dots in carrier redistribution in III-V multijunction solar cells with luminescent coupling effect

Improved design of InGaP/GaAs//Si tandem solar cells

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