Temperature Dependence of Local Electronic Properties of N-type GaN Crystals by Micro-Raman Imaging and Dielectric Dispersion at High Temperatures

Temperature dependence of the local electronic properties of n-type GaN crystals by micro-Raman spectroscopy and dielectric dispersion at high temperatures

“…12) Very recently, the LOPC mode Raman spectra of n-type GaN crystals were measured, and the electron density and resistivity values for GaN in the high-temperature region (from room temperature to 200 °C) were reported. 13) In the present study, we estimated the calculated values of the electron density, electric mobility, and resistivity by comparison with those by Hall effect measurement at high temperatures; we then investigated the temperature dependence of the calculated values in detail.…”