Temperature dependence of hydrogen-induced exfoliation of InP

Abstract

To investigate the mechanisms of hydrogen-induced blistering in III–V materials, a standard splitting dose of 5×1016H2+∕cm2 at 150keV was implanted into InP substrates cooled to −20°C. Substrate cooling during the implantation improved the reproducibility of this approach by limiting hydrogen mobility during ion implantation. The implant profile and defect structure of unbonded wafers were studied for various annealing schedules with double-axis x-ray diffraction and transmission electron microscopy. It was found that exfoliation was greatly facilitated by a combined lower-temperature (150°C) “defect nucleation” step, followed by a higher-temperature anneal (300°C). The nucleation of defects in the lower-temperature regime, which did not occur if the initial anneal was conducted only at higher temperatures, was attributed to defect trapping of hydrogen. This annealing sequence presents a means by which to (i) improve the interfacial bond strength at low temperatures while the “nucleation” occurs and (ii) promote efficient exfoliation at high temperature.

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

“…Indeed, it was only recently shown that the concept of hydrogen-induced exfoliation can be applied to the transfer of thin films of InP and GaAs to foreign substrates. [6][7][8] Moreover, a detailed understanding of the role of H in these materials is still lacking.…”

Role of hydrogen in hydrogen-induced layer exfoliation of germanium

“…Wafer bonding and layer transfer has now been applied to semiconductors other than silicon such as Ge, InP, GaAs, and GaN. [2][3][4][5][6] The mechanism of H-induced exfoliation has been extensively studied in the case of silicon, 7,8 and, more recently, in the case of InP. 9 The early work of Weldon et al provided important conclusions: ͑i͒ implantation induced defects serve to trap H within the Si substrate.…”

Lattice Strain Measurements in Hydrogen Implanted Materials for Layer Transfer Processes

“…Schematic of the layer transfer process which is involves ion implantation, direct wafer bonding and splitting of wafer induced by annealing. (Hayashi et al, 2004).…”

“…A few years later, Hayashi et al presented an investigation of hydrogen implanted InP to obtain exfoliation (Hayashi et al, 2004). InP wafers were cooled to below room temperature (-20 °C) during implantation to assess blistering kinetics without any uncontrolled temperature excursions that may occur from the implantation process.…”