The behavior of 3 He in the amorphous alloys Ni751Cr]4P1o1Coos, Ni635Zr365 and Nis77P123 is investigated. The samples were implanted with 150 keV 3He ions with doses of 1 x 10 16 and 5 X 1016 3He/cm2. The samples were isochronally annealed at several consecutive stages up to their crystallization temperatures. After each annealing stage, 3 He depth profiles were measured by a thermal-neutron-induced nuclear-reaction technique called neutron depth profiling (NDP). The maximum 3He release (-20%) was observed for the Ni 635Zr365 sample and it occurred before crystallization. Smaller but measurable amounts of 3He were released from most other combinations of sample material and implant doses The 3He release that we observed is controlled by a detrapping process, and there are indications that it is dependent on the implantation dose. In addition to 3He release measurements, our study yielded a determination of projected depths of 3He ions with an initial energy of 150 keV in the alloys studied. The most probable range values are: 320±21 rim for N1751Cr14P1o ICoos, 378±34 rim for Ni 635Zr365 and 375 f29 nm for N1 87 7P12 3 ,