Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Corfdir, Pierre; Teisseyre, H.; Suski, T.; Grzegory, I.; Lefèbvre, Pierre; Giraud, E.; Shahmohammadi, Mehran; Phillips, R. T.; Ganière, Jean‐Daniel; Grandjean, N.; Deveaud, B.

doi:10.7567/jjap.52.08jc01

Cited by 8 publications

(8 citation statements)

References 23 publications

(40 reference statements)

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“…35 He we report 4.7 ps.K À1 for theẼ==ỹ polarization and 3.1 ps.K À1 for theẼ==z polarization. We believe that these values are in concert with other experimentally measured values (for instance, see Cofdir et al 38 ) and are compatible with the predictions of the simple theory and deserve further studies. Obviously, the slope is a little bit smaller than the expected value probably because of the competition between the localized and delocalized excitons through the whole temperature range of this experiment.…”

Section: Time-resolved Photoluminescence Spectroscopysupporting

confidence: 89%

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Rosales

Gil

Bretagnon

et al. 2014

Journal of Applied Physics

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Articles you may be interested inRecombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells J. Appl. Phys. 116, 093517 (2014); 10.1063/1.4894513 Surface potential effect on excitons in AlGaN/GaN quantum well structures Appl. Phys. Lett. 102, 082110 (2013); 10.1063/1.4793568 Exciton recombination dynamics in a -plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence J. Appl. Phys. 107, 043524 (2010); 10.1063/1.3305336 Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions J. Appl. Phys. 105, 063104 (2009); 10.1063/1.3043888 Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowthThe optical properties of GaN/Al 0.15 Ga 0.85 N multiple quantum wells are examined in 8 K-300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells. V C 2014 AIP Publishing LLC. [http://dx.

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Section: Time-resolved Photoluminescence Spectroscopysupporting

confidence: 89%

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Rosales

Gil

Bretagnon

et al. 2014

Journal of Applied Physics

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“…blue shift with increasing temperature) for the low temperature range (4.2 and 77 K), which is an indication for exciton localization . In semiconductor materials excitons are localized at low temperatures and quasi‐free at high temperatures . Structural defects (e.g.…”

Section: Resultsmentioning

confidence: 93%

“…), nor the spectral shape (left panel in Fig. ) do change significantly when increasing the pulsed injection current at 4.2 K (which was applied in the range between 10 and 250 mA) . Due to the decreasing lifetime of bound excitons at 4.2 K the recombination occurs from low lying energy levels.…”

Section: Resultsmentioning

confidence: 96%

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Current density impact on the emission behavior of GaN‐based blue emitting LEDs in the temperature range of 4.2–400 K

Hetzel

Leising

2014

Physica Status Solidi (a)

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Blue emitting GaN-based light emitting diodes (LEDs) show a distinct spectral behavior with respect to temperature and injection current density. Operating LEDs with short current pulses of 500 ns provides a steady state situation, which allows investigating the emission behavior of LEDs at a certain device temperature thereby maintaining thermal equilibrium. The LEDs were examined in a temperature range between 4.2 and 400 K and in a current density range between 2 and 50 A cm À2 . Low temperature investigations showed a blue shift of the electroluminescence spectra (EL) with respect to junction temperature, which is assigned to the radiative recombination of localized excitons. In the elevated temperature region a distinct red shift due to energy gap shrinkage was observed. Further we expect an exciton lifetime reduction at 4.2 K. Additionally, the influence of the driving parameters (pulse injection current or direct current (DC)) in the presence of piezoelectric fields is discussed and separated into band filling effect and occurrence of fields, which screen the quantum confined Stark effect. Low temperature investigations indicate that band filling is mainly responsible for the blue shift of the EL spectra with respect to the injection current.

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“…In particular, radiative recombination of localized carriers is expected to contribute significantly to the PL signal at low temperatures. When the temperature is increased, the carriers become more mobile and an increased number of them can be captured by non‐radiative centers . This results, on the other hand, in a shortening in the PL decay time.…”

Section: Resultsmentioning

confidence: 99%

Luminescence dynamics in AlGaN with AlN content of 20%

Soltani

Bouzidi

Touré

et al. 2016

Phys. Status Solidi A

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Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time‐resolved photoluminescence (TR‐PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low‐temperature PL spectra exhibit several features, accompanied by a strong emission‐wavelength dependence of the PL decay time. A significant red‐shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature‐dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

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Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Cited by 8 publications

References 23 publications

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Current density impact on the emission behavior of GaN‐based blue emitting LEDs in the temperature range of 4.2–400 K

Luminescence dynamics in AlGaN with AlN content of 20%

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