Temperature Dependence of Electrical Resistance of Individual Carbon Nanotubes and Carbon Nanotubes Network

Dehghani, Sajjad; Moravvej-Farshi, Mohammad Kazem; Sheikhi, Mohammad Hossein

doi:10.1142/s0217984912501369

Cited by 34 publications

(19 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The figure also shows that the resistance of s-SWCNTs is significantly more diameter-dependent rather than m-SWCNTs. The increasing behavior of the resistance of m-SWCNTs with temperature, as well as the decreasing behavior of the resistance of s-SWCNTs, is physically reasonable and in agreement with the previous works (11,21,22).…”

Section: Resultssupporting

confidence: 92%

“…Considering both acoustic and optical phonon scattering, the effective mean free path for an SWCNT of diameter, D, at temperature, T, can be calculated using the following equations (11,21,22) 1…”

Section: M-swcntsmentioning

confidence: 99%

“…At room temperature (T D 300 K), it reduces to: a m j 300 K D . 22:2124 V C 0:0213618 L=D/ 41884:90V C 5:07612 L=D C 6473:3 (5)…”

Section: M-swcntsmentioning

confidence: 99%

“…We assumed that the measured resistance contains 3 types of resistances; tube-tube resistance, tube-contact metal resistance, and resistance of individual nanotubes. Based on experimental results and numerical analysis of individual SWCNTs, we found the resistance of individual tubes as the Dominant resistance in determining the total temperature dependence of resistance of SWCNTs network (22).…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Compact Formulas for the Electrical Resistance of Semiconducting and Metallic Single Wall Carbon Nanotubes

Dehghani

Moravvej-Farshi

Sheikhi

2015

Fullerenes, Nanotubes and Carbon Nanostructures

Self Cite

View full text Add to dashboard Cite

We present compact analytic formulas with appropriate accuracy for the resistance of semiconducting and metallic single wall carbon nanotubes (s-SWCNTs and m-SWCNTs) as functions of their diameters and lengths, and the temperature. Based on these relations, we investigate the dependence of their resistances and corresponding temperature coefficients on the SWNTs' diameters. Taking the tube to tube random variation in diameters of horizontally-aligned SWCNTs, we calculate the equivalent resistances and effective TCRs for arrays of both s-SWCNTs and m-SWCNTs.

show abstract

Section: Resultssupporting

confidence: 92%

Section: M-swcntsmentioning

confidence: 99%

“…At room temperature (T D 300 K), it reduces to: a m j 300 K D . 22:2124 V C 0:0213618 L=D/ 41884:90V C 5:07612 L=D C 6473:3 (5)…”

Section: M-swcntsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Compact Formulas for the Electrical Resistance of Semiconducting and Metallic Single Wall Carbon Nanotubes

Dehghani

Moravvej-Farshi

Sheikhi

2015

Fullerenes, Nanotubes and Carbon Nanostructures

Self Cite

View full text Add to dashboard Cite

show abstract

“…Later on, Alexopoulos et al studied the variation of electrical resistance for embedded CNTs-glass fiber reinforced composites in standard tensile and compressive experiments, in which CNTs showed undoubted advantages for damage sensing [7]. Dehghani et al systematically studied the temperature-resistance characteristics for single-wall and multi-wall carbon nanotube composites [8]. Zhang et al studied the resistivity response of a multi-wall CNTs/Polyurethane elastomeric composite film under cyclic loading [9].…”

Section: Introductionmentioning

confidence: 99%

Mechanical and piezo-resistance behavior of CNTs/Epoxy resin composite for structural health monitoring

Wang

Yue

Zhang

et al. 2018

26th International Conference on Optical Fiber Sensors

View full text Add to dashboard Cite

In the field of structural health monitoring, in-situ monitoring is always a challenge. One way to solve this issue is to create a multi-functional material, such as composite modified by carbon nanotubes (CNTs). However, fewer work were focused on the "hard" CNTs/Epoxy resin composite created by thermoset polymer matrix, which can both provide sufficient load capacity and self-sensing ability. In this work, the mechanical behavior of CNTs/Epoxy resin composite was evaluated by a cantilever bending test. Both metal wire strain gauge and fiber Bragg grating (FBG) sensor were pasted onto the beam surface. The strain measured by FBG sensor showed high sensitivity and accuracy, which was in good accordance with the results form strain gauge and numerical simulation. What's more, the piezo-resistance behavior of this CNTs/Epoxy resin composite was evaluated by a DC voltage dividing circuit. When the tensile stress (2.6MPa) applied on the beam sample, a ratio of resistance variation of 0.013 was observed and compared with numerical simulation. The gauge factor of the CNTs/Epoxy composite was calculated as 17.6. Preliminary modeling for such piezo-resistance behavior was failed. New theoretical model considering the integral geometry of the electrodes and the coupling piezo-resistance coefficient should be further investigated.

show abstract

Semiconducting Carbon Nanotubes Embedded in a Metallic Film for a Thermistor Device with an Adjustable Temperature Coefficient and Reduced Noise Source Activities

Shin

Cho

Kim

et al. 2020

Adv Elect Materials

View full text Add to dashboard Cite

On the other hand, a key issue in using sSWCNT channels for device applications (i.e., a transistor, temperature sensors) can be the interface between sSWCNTs and metal electrodes. [10] Previous reports show that the formation of Schottky barriers between sSWCNT and metal electrodes may increase the contact resistance and often electrical noises, resulting in the degradation of overall device performances. [11,12] However, the effect of sSWCNTs on the nanoscale transport properties (i.e., conductivity, charge trap activities) of the metal-sSWCNT interface structures has not been clearly understood yet. Herein, we report semiconducting SWCNTs embedded in Au films for a thermistor device with an adjustable temperature coefficient and reduced noise source activities. In this work, an Au thin film was deposited on sSWCNT network layers to build a thermistor device. Then, a scanning noise microscopy (SNM) method was utilized to map the resistivity and noise source activities on the hybrid film with a nanoscale resolution. The sSWCNT/ Au hybrid thin films showed a linear temperature-resistance dependence with minimal hysteresis. Interestingly, sSWCNTmetal hybrid films with rather thin Au films exhibited a negative temperature coefficient of resistance (TCR) values, while those with rather thick Au films showed a positive TCR. It indicates we can control the TCR values simply by changing the Au film thickness. The resistivity map measured by the SNM method exhibited three times smaller resistivity on the Au films with sSWCNTs, showing that sSWCNTs can work as a high conductance current path and enhance the conductivity of the film. Furthermore, we observed the 18 times smaller noise source activities in the region with sSWCNTs. These results show that sSWCNTs in thin metallic films can enhance the conductivity and reduce electrical noises, enabling high-performance device applications such as thermistors.

show abstract

Temperature Dependence of Electrical Resistance of Individual Carbon Nanotubes and Carbon Nanotubes Network

Cited by 34 publications

References 27 publications

Compact Formulas for the Electrical Resistance of Semiconducting and Metallic Single Wall Carbon Nanotubes

Compact Formulas for the Electrical Resistance of Semiconducting and Metallic Single Wall Carbon Nanotubes

Mechanical and piezo-resistance behavior of CNTs/Epoxy resin composite for structural health monitoring

Semiconducting Carbon Nanotubes Embedded in a Metallic Film for a Thermistor Device with an Adjustable Temperature Coefficient and Reduced Noise Source Activities

Contact Info

Product

Resources

About