Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's

Hafizi, M.; Stanchina, W.E.; Metzger, Robert A.; Macdonald, P.A.; Williams, F.

doi:10.1109/16.231562

Cited by 35 publications

(10 citation statements)

References 16 publications

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“…Chirped superlattices have also been successfully employed to compositionally grade the emitterbase and base-collector junction in Npn HBTs. 34,35 Further study is needed of hot hole injection and ballistic transport effects to determine the optimum base grading for the Pnp HBT.…”

Section: Discussionmentioning

confidence: 99%

A thermionic-emission-diffusion model for graded base Pnp heterojunction bipolar transistors

Datta

Roenker

Cahay

1998

Journal of Applied Physics

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Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistorAn analytical model which matches thermionic-emission-diffusion of holes across the emitter-base heterojunction with drift-diffusion transport across a graded base has been developed and used to examine the performance capabilities of InP-based Pnp heterojunction bipolar transistors ͑HBTs͒. Hole drift-diffusion across the emitter-base space charge region is shown to be of comparable importance to thermionic emission in controlling hole injection into the base. The effects of compositional base grading on the recombination currents is also taken into account. Compositional grading of the base is shown to enhance the device's current gain by as much as a factor of 10 by reducing recombination in the quasi-neutral base. More importantly, compositional base grading significantly reduces the base transit time which improves the device's peak cutoff frequency by as much as a factor of 1.5. A cutoff frequency as high as 35 GHz is found to be possible. The analysis indicates that composition grading of the base can be useful in developing high performance Pnp InP-based HBTs.

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Section: Discussionmentioning

confidence: 99%

A thermionic-emission-diffusion model for graded base Pnp heterojunction bipolar transistors

Datta

Roenker

Cahay

1998

Journal of Applied Physics

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“…When the sample is cooled down to 40 K, the increasing rate of the current gain decreases with temperature. For HBTs with conventional material systems, such as AlGaAs/GaAs HBTs [7], AlInAs/GaInAs HBTs [8], and InP/InGaAs HBTs [9][10][11], the current gain decreases with decrease in temperature because of the where s is the capture cross-section, N t the concentration of the recombination center and v th the thermal velocity of the carriers, the electron lifetime is inversely proportional to the square root of the temperature. Considering the stable current gain at low temperatures and the temperature dependence of each component mentioned above, the electron mobility in the p-type base layer should have negative temperature dependence, which is presumably because the ionized impurity scattering is relatively unaffected owing to carrier freezeout and the high activation energy of Mg in the p-InGaN base layer.…”

Section: Methodsmentioning

confidence: 99%

Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors

Nishikawa

Kumakura

Kasu

et al. 2009

Journal of Crystal Growth

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“…The decrease in with increasing baseplate temperature ( ) was calculated to be mV C, in agreement with prior measurements. [9], [10] This value is taken from the slope of the linear regression fit to data such as in Fig. 5.…”

Section: A Data Analysismentioning

confidence: 99%

Thermal Resistance Characterization of Implanted Subcollector InP-Based HBTs

Fields

Chen

Royter

et al. 2004

IEEE Trans. Device Mater. Relib.

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We present the results of measurements of thermal resistivity of the heterojunction bipolar transistor (HBT) devices, utilizing selective ion implantation to define the subcollector. This new device fabrication technique resulted in high-speed HBT devices with substantially reduced thermal resistivity, compared to devices utilizing the conventional fabrication approach which includes mesa isolation for pattern definition. The measurements were taken on full-thickness 3" InP wafers at amb from 30 C to 180 C and two separate emitter current densities. We present data on three device epitaxial structures with identical device layouts and discuss the relationship of be to temperature at these elevated power and temperature levels.

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Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's

Cited by 35 publications

References 16 publications

A thermionic-emission-diffusion model for graded base Pnp heterojunction bipolar transistors

A thermionic-emission-diffusion model for graded base Pnp heterojunction bipolar transistors

Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors

Thermal Resistance Characterization of Implanted Subcollector InP-Based HBTs

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