Temperature dependence of current–voltage characteristics of terahertz quantum-well photodetectors

Tan, Zhongxin; Guo, Xuguang; Cao, Jun; Li, He Ping; Wang, X; Feng, Siyu; Wasilewski, Z. R.; Liu, H C

doi:10.1088/0268-1242/24/11/115014

Cited by 8 publications

(7 citation statements)

References 20 publications

(23 reference statements)

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“…8. For sample v267 with peak response frequency of 3.2 THz, we reach the same conclusion as Tan, 12 i.e. that the TE contribution is dominant in dark current.…”

Section: B Dark Current Mechanismssupporting

confidence: 78%

“…For further description, we give the BLIP temperatures for THz QWPs with different peak response frequencies accounting for the contribution of SAT dark current. Our theoretical and experimental results show that SAT, which is well known for mid-infrared QWPs but has been ignored in previous investigations for QWPs in THz region, 5,7,12,14,[16][17][18] should be noted to play a key role in total dark current, and its further effect on the performance such as BLIP temperature has to be taken into consideration.…”

Section: Discussionmentioning

confidence: 90%

“…11 Tan et al have simulated the dark current of a 3.2 THz QWP and got the conclusion that the thermionic emission mechanism is the major mechanism to dark current. 12 But previous investigations have only been conducted on the basis of one specific sample and detailed dark current mechanisms of THz QWPs have not been elaborated.…”

Section: Introductionmentioning

confidence: 99%

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Dark current mechanism of terahertz quantum-well photodetectors

Jia

Gao

Hao

et al. 2014

Journal of Applied Physics

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Asymmetry in the dark current low frequency noise characteristics of B-B and B-C quantum well infrared photodetectors from 10 to 80 K Dark current mechanisms of terahertz quantum-well photodetectors (THz QWPs) are systematically investigated experimentally and theoretically by measuring two newly designed structures combined with samples reported previously. In contrast to previous investigations, scattering-assisted tunneling dark current is found to cause significant contributions to total dark current. A criterion is also proposed to determine the major dark current mechanism at different peak response frequencies. We further determine background limited performance (BLIP) temperatures, which decrease both experimentally and theoretically as the electric field increases. This work gives good description of dark current mechanism for QWPs in the THz region and is extended to determine the transition fields and BLIP temperatures with response peaks from 3 to 12 THz. V C 2014 AIP Publishing LLC. [http://dx.

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“…8. For sample v267 with peak response frequency of 3.2 THz, we reach the same conclusion as Tan, 12 i.e. that the TE contribution is dominant in dark current.…”

Section: B Dark Current Mechanismssupporting

confidence: 78%

Section: Discussionmentioning

confidence: 90%

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Dark current mechanism of terahertz quantum-well photodetectors

Jia

Gao

Hao

et al. 2014

Journal of Applied Physics

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“…Most reported devices meet the requirement of optical detection in terms of low dark current, high responsivity and fast response. Up to now, several groups have reported the temperature dependence for photodetectors, including Ge-on-Si p-i-n detector [11], nonreach-through 4H-SiC separate absorption avalanche detectors [12], terahertz quantum-well detectors [13] and Schottky detectors [14]. Lately, the dependence of dark current and response characteristics for GaN-based avalanche photodiodes can be found in [15].…”

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confidence: 99%

Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector

et al. 2012

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We investigate the temperature dependence of current-voltage and spectral response characteristics of a 4H-SiC metal-semiconductor-metal (MSM) ultraviolet photodetector in the temperature range from room temperature to 800 K with two-dimensional (2D) numerical simulator ISE-DESSIS. It is found that the dark current and photocurrent increase with the increasing temperature. For the range of 500-800 K, the dark current increases by nearly a factor 3.5 every 150 K larger than that of photocurrent, leading to a negative effect on photodetector current ratio (PDCR). Nevertheless, the PDCR is still greater than 200 even at 800 K, which exhibits the excellent thermal stability. In addition, the responsivity has an unsymmetrical trend. As temperature rises, it is clear that a remarkable red-shift of 12 nm occurs and overall responsivity is enhanced for longer wavelength. While the short-wavelength response remains relatively independent of temperature. The mechanism of indirect and direct band absorption transition is responsible for temperature-dependent spectrum distribution. These findings provide a significant insight on the design of the MSM detector operated at elevated temperature. silicon carbide, ultraviolet photodetector, temperature dependence Citation:Chen B, Yang Y T, Xie X R, et al. Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector. Chin Sci Bull, 2012Bull, , 57: 44274433, doi: 10.1007 In despite of having an indirect bandgap, silicon carbide (SiC) has emerged as an appropriate material for the fabrication of ultraviolet (UV)/visible optoelectronic devices over the last few years due to the available substrates [1], the lower defect density and a more mature process technology [2]. Typically, 4H-SiC based UV photodetectors achieve photosensitivity spectrum of 220-380 nm and peak responsivity at around 290 nm. Photodetectors based on Schottky contacts have an enhanced sensitivity to shorter wavelength radiation as well as a reduced response time as no minority carriers are involved [3]. Especially, the metalsemiconductor-metal (MSM) photodetectors possess potential merits of large device bandwidth, small intrinsic capacitance, and sub-nanosecond response time. Whilst the planar process of MSM detectors may be accomplished with as little as one photolithography step and allows their monolithic integration with other optical and electronic circuits [4]. Recent achievements include nano-structured MSM photodetector with high peak voltage [5], MSM solar-blind photodetector with fast rise and decay times of 10 ns and 150 ns [6], high responsivity MSM photodetector with 26000 A/W at 8 V bias via a carrier-trapping process [7]. More recently, MSM UV detectors exhibit UV-photo generated current to dark current ratio up to 1.34×10 8 with colloidal nanoparticles [8], realize a photocurrent gain around 40 at 2 V bias using CaF 2 as the insulator [9], and achieve a very low dark current density of 3.84 nA/cm 2 at 5 V bias based on sol-gel-derived TiO 2 f...

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“…The THz QWP used in the experiment is a GaAs/AlGaAs multiple quantum well (MQW) structure grown by molecular beam epitaxy on a semiinsulating GaAs substrate, which consists of 23 modules made of 22.1 nm GaAs wells and 95.1 nm Al 0.015 Ga 0.985 As barriers. The GaAs/AlGaAs MQWs are sandwiched between 400 nm top and 800 nm bottom GaAs contact layers doped with Si to 10 17 cm −3 , which reduces the contact layer free-carrier absorption and plasma reflection in terahertz region [14] and we use a wide barrier (95.1 nm) to reduce the tunneling current. [15] The normalized photocurrent spectrum of the THz QWP with a polished 𝜃 = 45 ∘ incident facet is measured on a Fourier transform spectrometer, as shown in Fig.…”

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confidence: 99%

THz Imaging Using a Quantum-Well Photodetector with Background Limited Performance

Zhou¹,

Zhang²,

Guo³

et al. 2012

Chinese Phys. Lett.

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Terahertz (THz) quantum well photodetectors (QWPs) are an extension of quantum well infrared photodetectors in the THz region. We construct an imaging system based on a THz QWP with a narrow response range from 3 THz to 6 THz. The peak responsivity of the THz QWP having background-limited performance is about 0.5 A/W, and the corresponding detectivity reaches 1011 cm·Hz1/2/W at temperature of 4.2 K. We obtain the images of a concealed object by the imaging system and prove that THz QWPs have the potential for imaging applications.

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Temperature dependence of current–voltage characteristics of terahertz quantum-well photodetectors

Cited by 8 publications

References 20 publications

Dark current mechanism of terahertz quantum-well photodetectors

Dark current mechanism of terahertz quantum-well photodetectors

Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector

THz Imaging Using a Quantum-Well Photodetector with Background Limited Performance

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