Temperature dependence of contact resistance for Au-Ti-Pd2Si-n +-Si ohmic contacts subjected to microwave irradiation

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n + -n doping step

“…Such growing dependences ρ с (Т) were obtained in [5][6][7] for ohmic contacts to lapped as well as polished n-Si, at presence of high density of structural defects in the Si near-contact region. In that case, calculation of the number of defects from etching pits made for lapped silicon gave ~10 7 cm -2 .…”

“…However, recent investigations [2][3][4][5][6][7][8][9] showed that in some cases ρ с does not demonstrate the above behavior. To illustrate, for ohmic contacts to wide-gap semiconductors with high dislocation density it was shown in [2-4, 8, 9] that ρ с increases with temperature.…”

“…To measure ρ с (Т) over the 125-375 K temperature range, we made test structures with specimens of both types. The configuration of test structures corresponded to ρ с measurement with the transmission line method (TLM) [13] that was used by us earlier in [5][6][7][8]. It enabled us to test ρ с with allowance for either conduction in the n + -layer only (planar configuration of TLM structure) or through the n + -n doping step (vertical configuration of TLM structure).…”

Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN

“…Contact resistivity ρ с decreases exponentially with temperature T at thermionic emission, while remaining independent of T at thermofield emission [1,2]. However, in some papers [3][4][5][6][7] non-typical (growing with temperature) dependences ρ с (Т) were detected in ohmic contacts. The authors of [3] assumed that these dependences ρ с (Т) were related with current flow via metal shunts formed when metal atoms segregate at dislocations, and made qualitative estimation of this process.…”

“…In [5,6], a model of current flow via metal shunts, with current limitation by diffusion supply of electrons, was proposed. This model took into account the density of the so-called conducting dislocations (oriented along the normal to the semiconductor surface) and scattering dislocations (oriented at an angle to that normal).…”