Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Hassan, Hamad; Raynaud, Christophe; Bevilacqua, Pascal; Scharnholz, Sigo; Planson, Dominique

doi:10.4028/www.scientific.net/msf.821-823.223

Cited by 9 publications

(18 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For higher temperatures, both (electrons and holes) ionization rates are almost constant ( figure 14). Table 3 resumes the values of An and Bn found for different temperatures [15]. The behavior of electron's ionization coefficients an is similar to that of electrons in silicon devices.…”

Section: Temperature Dependence Of 4h-sic Ionization Ratesmentioning

confidence: 70%

“…where An,b and Bn,p are constants to be determined and E is the electric field. OBIC measurements are realized on diodes of structure a, and experimental multiplication curve (inside the optical window) is found by considering V0 = 1 V. Ionization rates parameters are then adjusted to fit theoretical curve of M with experimental one by minimizing an error function DM [15,17]. Table 2 displays the values of An,b and Bn,p for 4H-SiC using both of laser sources (and then single-and two-photon absorption processes).…”

Section: Determination Of Ionization Ratesmentioning

confidence: 99%

See 1 more Smart Citation

OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K

Hassan

Planson

Raynaud

et al. 2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Wide bandgap semiconductors have recently become more used in the power electronics domain. They are predicted to replace the traditional silicon especially for high voltage and/or high frequency devices. Device design has shown a big progress in the last two decades. Substrates up to six inches of diameter are now commercialized with very low defect densities. Such a development is due to many studies that never stop. Among these studies, the ones that allow an excess of charge carriers in the space charge region (like OBIC-Optical Beam Induced Current-and EBIC-Electron Beam Induced Current-) are efficient to analyze the variation of electric field as function of the voltage and the beam position. This paper shows OBIC technique applied to wide bandgap semiconductors based devices. OBIC cartography gives an image of the electric field in the device, and the analysis of OBIC signal help determining some characteristics of the semiconductors like minority carrier lifetime and ionization rates. These are key parameters to predict device switching behavior and breakdown voltage.

show abstract

Section: Temperature Dependence Of 4h-sic Ionization Ratesmentioning

confidence: 70%

Section: Determination Of Ionization Ratesmentioning

confidence: 99%

OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K

Hassan

Planson

Raynaud

et al. 2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…OBIC measurements are realized on Schottky diodes with an optical window. Experimental multiplication curve (inside the optical window) is found by considering V0 = 1 V. Ionization rates parameters are then adjusted to fit theoretical curve of M with experimental one by minimizing an error function DM [15]- [17]. Table 2 displays the values of An,b and Bn,p for 4H-SiC using both of laser sources (and then single-and two-photon absorption processes).…”

Section: -Ionization Coefficients Determinationmentioning

confidence: 99%

“…Green Table 2. Parameters of ionization rates of 4H-SiC using OBIC method with two different wavelengths [15]- [17]. Fig.…”

Section: Uv Lasermentioning

confidence: 99%

Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

Planson

Asllani

Phung

et al. 2019

Materials Science in Semiconductor Processing

Self Cite

View full text Add to dashboard Cite

Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section.

show abstract

“…hole, SCR) multiplication coefficient, Jn and Jp are the minority carrier currents at the edges of SCR, JSCR is the photo-generated current inside the SCR. Minority currents can be found by solving the continuity equations of charge carriers and taking into account the limit conditions [6]. To determine ionization rates, different authors have proposed models for ionization rates [9-11] by taking into account some physical approximations or by giving empirical equations.…”

Section: Obic Principlementioning

confidence: 99%

Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption <sup></sup>

Hassan

Raynaud

Bevilacqua

et al. 2016

MSF

Self Cite

View full text Add to dashboard Cite

Optical Beam Induced Current (OBIC) measurements are performed on 4H-SiC avalanche diodes with a very thin and a highly doped active region. A pulsed green laser, with a wavelength of 532 nm, illuminates a reverse biased diode leading to generate electron-hole pairs in the space charge region. Comparison between the 4H-SiC bandgap and the incident photon energy shows that single photon absorption process can be neglected and two-photon absorption process dominates in this case. Ionization rates are then extracted from multiplication curve in a high electric field range (3 to 5 MV.cm–1). Results are in good agreement with previous ones obtained on the same diodes using single photon absorption process.

show abstract

Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Cited by 9 publications

References 15 publications

OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K

OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K

Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption <sup></sup>

Contact Info

Product

Resources

About