Temperature dependence and non-uniformity of electrical properties of SOI films obtained by oxygen implantation

Cristoloveanu, S.; Wyncoll, J.; Spinelli, P.; Hemment, P.L.F.; Arrowsmith, R.P.

doi:10.1016/0378-4363(85)90579-0

Cited by 8 publications

(1 citation statement)

References 7 publications

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“…Spreading resistance profiling has been used also in the past [15][16][17][18] for SIMOX characterization. It was used in this work to provide resistance profiles which can be used to give information on the quality of the insulating nature of the buried oxide layers.…”

Section: Methodsmentioning

confidence: 99%

Double SIMOX Structures Formed by Sequential High Energy Oxygen Implantation into Silicon

Hatzopoulos

Skorupa

Siapkas

2000

J. Electrochem. Soc.

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In this paper, the formation of novel Si/SiO 2 multilayer structures using separation by implantation of oxygen (SIMOX) technology is reported. The structures were formed to investigate the suitability of SIMOX technology for the formation of Si waveguiding structures. The method comprised two subsequent oxygen implants at 9 and 3.8 MeV and a final high temperature annealing step at 1300ЊC for 12 h. Fourier transform infrared reflection spectroscopy, Rutherford backscattering spectroscopy/channelling analysis, cross-sectional transmission electron microscopy, and spreading resistance profiling have been used to characterize the samples. Additionally, waveguiding loss measurements have been carried out. Interaction or transport of oxygen between the two buried oxide layers is not observed after the anneal and so, it is concluded that the implantation and annealing schedule followed here can be safely used for the production of such multilayer structures. It is shown that for 3.8 MeV O ϩ implantation into Si, a dose of 1 ϫ 10 18 cm Ϫ2 is adequate to form a continuous, highly resistive, buried layer, while for the 9 MeV case, a higher dose is necessary. Both Si layers qualify as waveguiding layers for infrared wavelengths (1.523 m), as they are of high crystal quality. Waveguiding loss measurements give a high value of 20 dB/cm, indicating that the process needs further optimization.

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Section: Methodsmentioning

confidence: 99%

Double SIMOX Structures Formed by Sequential High Energy Oxygen Implantation into Silicon

Hatzopoulos

Skorupa

Siapkas

2000

J. Electrochem. Soc.

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Thermal donor and new donor generation in SOI material formed by oxygen implantation

et al. 1985

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Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon-on-insulator films formed by oxygen implantation

Cristoloveanu¹,

Lee²,

Pumfrey³

et al. 1986

Journal of Applied Physics

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The nonhomogeneous distribution of the carrier transport properties in silicon on insulator thin films synthesized by oxygen implantation are determined using gate-controlled p-type Hall devices. The conductivity, Hall effect, and capacitance were measured between 77 and 300 K as a function of the gate voltage and then differentiated to obtain depth profiles. The hole mobility is high and nearly constant in the top 100 nm of the film but drops rapidly in the region containing implantation-induced defects. The very good quality of the top layer, similar to that of bulk Si, is confirmed by the temperature behavior of both the mobility and the ionized impurity concentration at various depths in the film. Acoustic phonon scattering is found to prevail above 120 K and Coulombian scattering below. A difference between the profile of the total number of holes and that of the mobile holes is observed at low temperatures and explained in terms of long-range potential fluctuations.

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Temperature dependence and non-uniformity of electrical properties of SOI films obtained by oxygen implantation

Cited by 8 publications

References 7 publications

Double SIMOX Structures Formed by Sequential High Energy Oxygen Implantation into Silicon

Double SIMOX Structures Formed by Sequential High Energy Oxygen Implantation into Silicon

Thermal donor and new donor generation in SOI material formed by oxygen implantation

Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon-on-insulator films formed by oxygen implantation

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