Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers

Zhang, A. P.; Dang, G.; Ren, F.; Han, Jung; Polyakov, A. Y.; Smirnov, N. B.; Говорков, А. В.; Redwing, Joan M.; Cho, H.; Pearton, S. J.

doi:10.1063/1.126791

Cited by 40 publications

(15 citation statements)

References 14 publications

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“…[1][2][3][4][5][6][7][8][9][10][11] The GaN materials system has a high breakdown field, can operate at high temperatures ͑ϳ500°C͒ and has reasonable thermal conductivity if bulk wafers are available. [1][2][3][4][5][6][7][8][9][10][11] The GaN materials system has a high breakdown field, can operate at high temperatures ͑ϳ500°C͒ and has reasonable thermal conductivity if bulk wafers are available.…”

Section: Introductionmentioning

confidence: 99%

Characterization of bulk GaN rectifiers for hydrogen gas sensing

Voss

Gila

Pearton

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Pd and Pt Schottky diodes were fabricated on free-standing 2-in.-diameter GaN substrates prepared by a combination of hydride vapor phase epitaxy of ϳ350 m onto sapphire, substrate removal and subsequent growth of 3 m of epi GaN by metalorganic chemical vapor deposition. Vertical diodes with Ti/ Al/ Pt/ Au back contacts annealed at 850°C for 30 s showed excellent rectification with an on/off ratio of ϳ100 at 1.5 V / −10 V. Both forward turn-on and reverse breakdown voltages showed negative temperature coefficients. Pd and Pt diodes showed detection of 10 ppm H 2 in N 2 at 25°C, with fast ͑Ͻ10 s͒ recovery times upon removal of hydrogen from the measurement ambient. The Pt showed higher detection sensitivity than Pd. Detection of C 2 H 4 and C 2 H 6 required much higher temperatures ͑ϳ450°C͒ and concentrations ͑10%͒ of the gases in N 2 than hydrogen detection.

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Section: Introductionmentioning

confidence: 99%

Characterization of bulk GaN rectifiers for hydrogen gas sensing

Voss

Gila

Pearton

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…1,2 The use of wide band gap materials such as GaN or SiC should alleviate some of the problems with using SiC for these applications, such as the need for extensive thermal management and vertical or parallel connection of devices in order to withstand the very high voltages and on-state currents. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] p-i-n rectifiers are expected to have larger reverse blocking voltages, V B , than Schottky rectifiers, but inferior switching speeds due to stored charge and higher forward turn-on voltages, V F . 13 All of the GaN p-i-n rectifiers reported to date have been heteroepitaxial devices, with the active layers grown on Al 2 O 3 substrates.…”

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confidence: 99%

Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers

Irokawa

Luo

Kim

et al. 2003

Applied Physics Letters

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p-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage, V F was ϳ5 V at 300 K and displayed a positive temperature coefficient. The specific on-state resistance (R ON ) was ϳ5 m⍀ cm 2 at 300 K, with an ideality factor of ϳ2 and activation energy for low forward current density of ϳ1.6 eV. This is consistent with carrier recombination in the space charge region via a midgap deep level. The figure-of-merit, V B 2 /R ON , where V B is the reverse breakdown voltage, was 0.32 MW cm Ϫ2 . The reverse recovery time was р600 ns at 300 K. The improved forward characteristics relative to previous heteroepitaxial p-i-n GaN rectifiers show the advantages of employing a GaN substrate to make a true vertical transport geometry device.

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“…Recent studies on GaN-based Schottky and pn junction diodes have reported negative temperature coefficients because of defect-assisted tunneling through the surface or defect states, [5][6][7][8] while we have shown almost temperature-independent characteristics of the breakdown voltage for GaN-based vertical conducting pn junction diode. 9) Then, it is of considerable interest to investigate the high-temperature characteristics of Al x Ga 1Àx N-based vertical conducting diodes.…”

Section: Introductionmentioning

confidence: 95%

High-Temperature Characteristics of Al_xGa_1-xN-Based Vertical Conducting Diodes

Nishikawa

Kumakura

Kasu

et al. 2008

jjap

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We investigated the high-temperature characteristics for Al x Ga 1Àx N-based (x ¼ 0 { 0:57) vertical conducting diodes. In the forward current-voltage (I-V) characteristics, the offset voltage decreases with temperature because of the reduction of the built-in potential due to the decrease in the bandgap energy with temperature. In spite of an increase in SiC substrate resistance with temperature because of a decrease in the electron mobility, the on-state resistance of the diode with Al 0:22 Ga 0:78 N is as low as 1.45 m cm 2 even at 250 C because of the reduced resistance of the p-InGaN layer due to an increase in the hole concentration. In the reverse I-V characteristics, the breakdown voltage increases with increasing Al composition, x, of Al x Ga 1Àx N layer because the higher the Al composition of the Al x Ga 1Àx N layer is, the higher the critical electric field becomes. Although the reverse leakage current of Al x Ga 1Àx N-based diodes increases with increasing temperature, the breakdown voltage at elevated temperatures is similar to that at room temperature. These features indicate the feasibility of Al x Ga 1Àx N-based diodes for high-temperature operation.

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Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers

Cited by 40 publications

References 14 publications

Characterization of bulk GaN rectifiers for hydrogen gas sensing

Characterization of bulk GaN rectifiers for hydrogen gas sensing

Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers

High-Temperature Characteristics of Al_xGa_1-xN-Based Vertical Conducting Diodes

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Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers

Cited by 40 publications

References 14 publications

Characterization of bulk GaN rectifiers for hydrogen gas sensing

Characterization of bulk GaN rectifiers for hydrogen gas sensing

Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers

High-Temperature Characteristics of AlxGa1-xN-Based Vertical Conducting Diodes

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High-Temperature Characteristics of Al_xGa_1-xN-Based Vertical Conducting Diodes