2015
DOI: 10.1002/mop.29369
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Temperature dependance of elctromagnetic radiation from terahertz photoconductive antennas

Abstract: In this article, a modified equivalent circuit model for analysis of terahertz (THz) photoconductive antennas has been introduced to investigate the effect of temperature on the performance of this device. Based on this modified equivalent circuit model, the effect of temperature on various parameters of a THz photoconductive antenna such as excited THz photocurrent, radiated electromagnetic field and optical‐to‐THz power conversion efficiency has been studied. The model predicts that an increase in the operat… Show more

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Cited by 9 publications
(4 citation statements)
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References 14 publications
(21 reference statements)
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“…In addition, α(T) is the temperature-dependent absorption coefficient and T is the temperature in kelvin. For a GaAs layer with a direct band gap, α(T) can be expressed as [ 37 ]: where K abs is a certain frequency-independent constant which is approximately 9.7 × 10 15 for GaAs [ 37 ], and E g (T) is the LT-GaAs’ temperature dependent band gap energy defined as: in which E g (0) is the GaAs’ gap energy at 0 °K which is about 1.519 eV, α E and β E are material constants of GaAs which are approximately 5.41 × 10 −4 eV/K and 204 K, respectively [ 38 ].…”
Section: Photomixer Designmentioning
confidence: 99%
“…In addition, α(T) is the temperature-dependent absorption coefficient and T is the temperature in kelvin. For a GaAs layer with a direct band gap, α(T) can be expressed as [ 37 ]: where K abs is a certain frequency-independent constant which is approximately 9.7 × 10 15 for GaAs [ 37 ], and E g (T) is the LT-GaAs’ temperature dependent band gap energy defined as: in which E g (0) is the GaAs’ gap energy at 0 °K which is about 1.519 eV, α E and β E are material constants of GaAs which are approximately 5.41 × 10 −4 eV/K and 204 K, respectively [ 38 ].…”
Section: Photomixer Designmentioning
confidence: 99%
“…In addition, α(T) is the temperature-dependent absorption coefficient and T is the temperature in kelvin. For a GaAs layer with a direct band gap, α(T) can be expressed as [37]:…”
Section: Photomixer Designmentioning
confidence: 99%
“…where K abs is a certain frequency-independent constant which is approximately 9.7 × 10 15 for GaAs [37], and E g (T) is the LT-GaAs' temperature dependent band gap energy defined as:…”
Section: Photomixer Designmentioning
confidence: 99%
“…There were still however some important factors influencing the radiation of the antenna which were neglected in the model, like the temperature and the operation frequency of the antenna. The latest model was developed so as to address the temperature dependance of the radiation of the antenna [19]. However, neither of these models consider the effect of operational frequency of the antenna.…”
mentioning
confidence: 99%