Temperature Control Concept for Parallel IGBT Operation

Abstract

This paper addresses the concept of load balancing in the operation of parallel insulated-gate bipolar transistors (IGBTs), in which the temperature is used as the main control parameter. In parallel IGBT operation, it is essential to ensure an equal load distribution across all IGBTs. Two basic algorithm concepts for temperature control were developed for the purpose of balancing. A test model based on the parallel IGBTs operation was assembled in a laboratory and the developed algorithms were tested for the chosen parameters. MATLAB was used for final data processing. The comparison between the two implemented basic algorithms provides insights into the temperature behavior of parallel IGBTs in terms of individual IGBT’s heating and cooling trajectories and time constants. All tests were conducted without the heatsinks to obtain the worst-case scenario in terms of thermal conditions. The test results show that temperature control in the operation of parallel IGBTs is possible but limited.

In Situ Combustion Synthesis of Gr/h-BN Composites and Its Passive Heat Dissipation Application

“…With the development of high-power devices, such as insulated gate bipolar transistors (IGBTs), toward miniaturization, high-current density, and high-tension, a highly efficient approach for heat dissipation in time has become very urgent, which has a detrimental effect on the performance and lifetime of these devices. − Generally, there are three typical methods for heat dissipation, i.e., thermal conduction, convection, and radiation. , Traditional radiator fans and cooling fins have been widely used to enhance heat convection and thermal conduction, respectively. However, given the increasing demand on higher-power devices, these methods are insufficient for heat dissipation, resulting in power-off protection and thus decreasing the operating efficiency.…”