Temperature-compensated high-stability silicon resonators

Melamud, R.; Kim, Bongsang; Chandorkar, Saurabh A.; Hopcroft, Matthew A.; Agarwal, M.; Jha, C.M.; Kenny, Thomas W.

doi:10.1063/1.2748092

Cited by 114 publications

(48 citation statements)

References 14 publications

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“…For single crystal silicon, dE/E is a negative temperature dependent term and therefore the overall resonant shift is negative [10], which corresponds to our measurements in Fig. 4.…”

Section: A Temperaturesupporting

confidence: 70%

Effect of laser deflection on resonant cantilever sensors

et al. 2009

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Laser beam deflection is a well known method commonly used in detecting resonance frequencies in atomic force microscopes and in mass/force sensing. The method focuses a laser spot on the surface of cantilevers to be measured, which might change the mechanical properties of the cantilevers and affect the measurement accuracy. In this work we showed that the joule heating of the laser, besides other extrinsic effects such as surface contamination, can cause a significant amount of shift in the resonator. The longer and softer the cantilever is, the more significant the effect. We suggest that the laser effects on the resonant response of sensors have to be taken into account.

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“…For single crystal silicon, dE/E is a negative temperature dependent term and therefore the overall resonant shift is negative [10], which corresponds to our measurements in Fig. 4.…”

Section: A Temperaturesupporting

confidence: 70%

Effect of laser deflection on resonant cantilever sensors

et al. 2009

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“…The thermal compensation technique using a compensating layer of SiO 2 to a device structure has been applied to many different kinds of resonators. [7][8][9][10][11][12][13] This present work demonstrates the thermal compensation for AlN Lamb wave resonators operating at high temperature using an AlN/SiO 2 composite structure. By designing composite structures with different normalized AlN thickness ͑h AlN / ͒ and normalized SiO 2 thickness ͑h SiO 2 / ͒, Lamb wave resonators with a zero first-order temperature coefficient of frequency ͑TCF͒ at 214°C, 430°C, and 542°C are experimentally demonstrated.…”

mentioning

confidence: 99%

Thermally compensated aluminum nitride Lamb wave resonators for high temperature applications

Lin

Yen

Felmetsger

et al. 2010

Applied Physics Letters

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113

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In this letter, temperature compensation for aluminum nitride (AlN) Lamb wave resonators operating at high temperature is presented. By adding a compensating layer of silicon dioxide (SiO2), the turnover temperature can be designed for high temperature operation by varying the normalized AlN film thickness (hAlN/λ) and the normalized SiO2 film thickness (hSiO2/λ). With different designs of hAlN/λ and hSiO2/λ, the Lamb wave resonators were well temperature-compensated at 214 °C, 430 °C, and 542 °C, respectively. The experimental results demonstrate that the thermally compensated AlN Lamb wave resonators are promising for frequency control and sensing applications at high temperature.

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“…Electrostatic tuning is commonly implemented to achieve this frequency trimming function and has been demonstrated previously [17], [19]. However, the use of electrostatic tuning requires the application of a DC bias during nominal operation which leads to increased power consumption and more importantly makes the clock frequency susceptible to bias voltage fluctuations.…”

Section: Active Temperature Compensation Resultsmentioning

confidence: 99%

“…Degenerate doping [15] and use of materials with opposite TCF values [16] have both been explored as mechanisms to reduce the TCF value of such resonators. For example, using a thermally grown oxide coating, which has a positive TCF, a silicon resonator has been demonstrated with frequency variation of less than 200 ppm over a wide temperature range [17]. A passive TCF compensation strategy utilizing oxide pillars uniformly distributed through the resonator was demonstrated in [18].…”

Section: Introductionmentioning

confidence: 99%

Temperature compensated silicon resonators for space applications

Rais‐Zadeh

Thakar

et al. 2013

SPIE Proceedings

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This paper presents piezoelectric transduction and frequency trimming of silicon-based resonators with a center frequency in the low megahertz regime. The temperature coefficient of frequency (TCF) of the resonators is reduced using both passive and active compensation schemes. Specifically, a novel technique utilizing oxide-refilled trenches is implemented to achieve efficient temperature compensation while maintaining compatibility with wet release processes. Using this method, we demonstrate high-Q resonators having a first-order TCF as low as 3 ppm/°C and a turnover temperature of around 90 °C, ideally suited for use in ovenized platforms. Using active tuning, the temperature sensitivity of the resonator is further compensated around the turnover temperature, demonstrating frequency instability of less than 400 ppb. Such devices are ideally suited as timing units in space applications where size, power consumption, and temperature stability are of critical importance.

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Temperature-compensated high-stability silicon resonators

Cited by 114 publications

References 14 publications

Effect of laser deflection on resonant cantilever sensors

Effect of laser deflection on resonant cantilever sensors

Thermally compensated aluminum nitride Lamb wave resonators for high temperature applications

Temperature compensated silicon resonators for space applications

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