Temperature Characteristics of 1.3-$\mu$m p-Doped InAs–GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

Tong, Cunzhu; Xu, Dawei; Yoon, Soon Fatt; Ding, Ying; Fan, Wenhui

doi:10.1109/jstqe.2008.2010235

Cited by 18 publications

(13 citation statements)

References 23 publications

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“…Figure 4 shows results obtained from the proposed circuit model expressing a good agreement with the experimental data when compared with the measured results given in (Tong et al 2009b). Noted that the experimental results for 55 and 65°C were not available.…”

Section: Circuit Model Including Thermal Effectssupporting

confidence: 66%

“…by increasing the relaxation Fig. 4 Comparison between experimental data (Tong et al 2009b), and circuit model results simulation for different ambient temperature time, the relaxation oscillation is damped and the output power decreases, that is due to the degradation of external quantum efficiency. Also the transient response for different temperatures is shown in Fig.…”

Section: Circuit Model Including Thermal Effectsmentioning

confidence: 98%

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Circuit-level implementation of quantum-dot VCSEL

et al. 2016

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In this paper, for the first time a circuit model of quantum dot InGaAs-GaAs VCSEL including thermal effects is presented. The model is able to predict L-I characteristics for a range of ambient temperatures that the simulation results reveal a good agreement with experimental data reported in literatures. Also the effects of carrier dynamics on the QD-VCSEL performance are simulated that is accordance with results reported by other researcher. The parameters affecting high-speed optical modulation techniques, particularly on-off keying, such as turn-on delay, relaxation oscillations frequency (f ro ) and cutoff frequency for different level modulation currents are investigated. The model is compatible with circuit analysis programs.

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Section: Circuit Model Including Thermal Effectssupporting

confidence: 66%

Section: Circuit Model Including Thermal Effectsmentioning

confidence: 98%

Circuit-level implementation of quantum-dot VCSEL

et al. 2016

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“…Until now, several static and dynamic characteristics of 1.3-µm InAs-GaAs QD VCSELs have been investigated experimentally [6][7][8]. Many theoretical models have been presented, such as as simple phenomenological rate equations model [9,10].…”

Section: Introductionmentioning

confidence: 99%

Time-Domain Travelling-Wave Model for Quantum Dot Based Vertical Cavity Laser Devices

Abouelez¹,

El-Diwany²,

Mashade³

et al. 2018

PIER M

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A self-consistent time-domain travelling-wave model for the simulation of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) is developed. The 1-D time-domain travelling-wave model takes into consideration of time-varying QD optical susceptibility, refractive index variation resulting from intersubband free-carrier absorption, homogeneous and inhomogeneous broadening, and QD spontaneous emission noise source. Carrier concentration rate equations are considered simultaneously with the travelling wave model. Effects of temperature on optical susceptibility and carrier density in the active region are taken into account. The model is used to analyze the characteristics of 1.3-µm oxide-confined QD InAs-GaAs VCSEL. The field distribution resulting from time-domain travelling-wave equations, in both the active region and distributed Bragg reflectors, is obtained and used in finding the device characteristics including light-current static characteristics considering the thermal effect. Furthermore, the dynamic characteristics and modulation frequency response are obtained in terms of inhomogeneous broadening.

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“…Another, more promising, alternative is using GaAs-based VCSELs with InAs/GaAs quantum dots (QD) in the active region. Researchers currently consider these VCSELs particularly advantageous and attractive in research in the 1.3-µm photonics module design [25][26][27][28][29][30]. The several inherent merits of the QD structure compared with the QW structure are listed below:…”

Section: Various Materials Have Been Proposed and Demonstrated For Bumentioning

confidence: 99%

“…Therefore, they are considered good potential candidates for 1.3-μm fiber communication. Current research is now focused on the oxide-confined structure [17,19,26,29]. Selective oxidation is formed in the AlGaAs layer, which provides better optical and electrical confinement and is an important factor in achieving single-mode lasing [19].…”

Section: Various Materials Have Been Proposed and Demonstrated For Bumentioning

confidence: 99%

Thermal effects in 1.3-μm InAs/GaAs quantum-dot vertical-cavity surface-emitting lasers

Xu¹

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1.3-μm GaAs/InAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) are attracting great interest in the research of laser diodes due to the special merits of the QD structure. However, the performance of QD VCSELs is influenced negatively by their carrier confinement, which suffers a significant degradation due to a serious self-heating effect. The goal of this project is to analyze and characterize the influence of self-heating on the performance of output power in 1.3-μm GaAs/InAs QD VCSELs and to realize the improvement and optimization in device fabrication. This research work includes both theoretical (modeling) and experimental (device processing) approaches. In theoretical study, a self-consistent model comprised of rate equations and the thermal conduction equation was established to analyze the influence of self-heating on the carrier occupation, the quantum efficiency and the output power of 1.3-μm GaAs/InAs QD VCSELs. The simulation results showed that the poor hole confinement in QDs is due to the thin wetting layer, and the increase in the surface density and the layer number of QDs can significantly decrease the self-heating generation and improve the quantum efficiency. The output power of QD VCSELs is mainly determined by the quantum efficiency. A higher output power can be achieved by increasing the number of QD layers and the surface density. However, there exists an optimized number of QD layers (~15) to achieve the highest roll-over output power.

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Temperature Characteristics of 1.3-$\mu$m p-Doped InAs–GaAs Quantum-Dot Vertical-Cavity Surface-Emitting Lasers

Cited by 18 publications

References 23 publications

Circuit-level implementation of quantum-dot VCSEL

Circuit-level implementation of quantum-dot VCSEL

Time-Domain Travelling-Wave Model for Quantum Dot Based Vertical Cavity Laser Devices

Thermal effects in 1.3-μm InAs/GaAs quantum-dot vertical-cavity surface-emitting lasers

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