Temperature and pressure dependences of the dielectric constants of semiconductors

Samara, G. A.

doi:10.1103/physrevb.27.3494

Cited by 535 publications

(177 citation statements)

References 25 publications

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“…Nevertheless, given that the electron effective mass determines (along with the dielectric constant) the ionization energy of shallow donors, its pressure coefficient is expected to be very small. This can be inferred, for instance, from the very low pressure coefficient of both the shallow donor ionization energy [35] and the dielectric constant [36] of bulk Si. These results, extrapolated to the case of the Si NCs, imply that the pressure behavior of the quantum-confined optical emission is not strongly affected by pressure-induced volume or electron effective-mass changes.…”

Section: Peak P1mentioning

confidence: 99%

Optical emission fromSiO2-embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study

et al. 2015

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We investigate the optical properties of high-quality Si nanocrystals (NCs)/SiO 2 multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the optical emission of the Si NCs/SiO 2 . The Si NCs were produced by chemical-vapor deposition of Si-rich oxynitride (SRON)/SiO 2 multilayers with 5-and 4-nm SRON layer thicknesses on fused silica substrates and subsequent annealing at 1150°C, which resulted in the precipitation of Si NCs with an average size of 4.1 and 3.3 nm, respectively. From the pressure dependence of the Raman spectra we extract a phonon pressure coefficient of 8.5 ± 0.3 cm −1 /GPa in both samples, notably higher than that of bulk Si (5.1 cm −1 /GPa). This result is ascribed to a strong pressure amplification effect due to the larger compressibility of the SiO 2 matrix. In turn, the PL spectra exhibit two markedly different contributions: a higher-energy band that redshifts with pressure, and a lower-energy band which barely depends on pressure and which can be attributed to defect-related emission. The pressure coefficients of the higher-energy contribution are (−27 ± 6) and (−35 ± 8) meV/GPa for the Si NCs with a size of 4.1 and 3.3 nm, respectively. These values are sizably higher than those of bulk Si (−14 meV/GPa). When the pressure amplification effect observed by Raman scattering is incorporated into the analysis of the PL spectra, it can be concluded that the pressure behavior of the high-energy PL band is consistent with that of the indirect transition of Si and, therefore, with the quantum-confined model for the emission of the Si NCs.

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Section: Peak P1mentioning

confidence: 99%

Optical emission fromSiO2-embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study

et al. 2015

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“…Optical dielectric constant (ε α ) is calculated from the relation [18] Where n is the refractive index. The estimated value of dielectric constant for the sample is cited in Table 2.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Structural and Spectroscopic Properties of Nanostructured CdS Films

Mochahari¹

2017

IJSRPAS

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Abstract-Nanostructured cadmium sulphide (CdS) films have been prepared on glass substrates by chemical bath deposition (CBD) method at room temperature. Analysis of the samples by x-ray diffraction (XRD) exhibits the films have cubic phase structure of CdS. Different structural parameters such as crystallite size (using Scherrer's relation) and dislocation density of the samples have been estimated. Optical absorption spectra of the sample falls in the visible region and various optical parameters such as optical band gap energy (using Tauc's formula), refractive index as well as dielectric constant have been calculated. Chemical composition of the samples has been investigated using fourier transform infra red (FTIR) spectroscopy.

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“…Grup indisinin artışı bant genişliğini azalttığından normalize gecikme-bant genişliği çarpanı (NDBP) kıstas bir parametre olarak kabul edilmektedir [20]- [23], NDBP.…”

Section: Materyal Ve Metodunclassified

Enhancement of Sensitivity of Photonic Crystal Based Temperature Sensor

Bagci¹,

Tezcan²,

Akoğlu³

2015

Pamukkale J Eng Sci

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Temperature and pressure dependences of the dielectric constants of semiconductors

Cited by 535 publications

References 25 publications

Optical emission fromSiO2-embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study

Optical emission fromSiO2-embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study

Investigation of Structural and Spectroscopic Properties of Nanostructured CdS Films

Enhancement of Sensitivity of Photonic Crystal Based Temperature Sensor

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