Temperature and Orientation Dependence of Plastic Deformation in GaAs Single Crystals Doped with Si, Cr, or Zn

Abstract

Stress-strain curves are presented for Si-doped GaAs single crystals deformed in compression parallel to <loo> and <111> at temperatures ranging from 250" t0550"C. In both orientations, slip occurs only on { 111) <110>. Repeatedyielding experiments on GaAs crystals, both undoped and doped with Si, Cr, or Zn, indicate that Si-doped crystals (ntype) have a greater yield stress than undoped crystals, that undoped crystals have a greater yield stress than Zn-doped crystals @-type), and that Cr doping does not significantly affect the yield stress. Extensive crack formation resulting from deformation was not observed. Compression specimens normally failed by breaking into several columnar fragments with their long dimension parallel to the stress axis.

Dislocation multiplication in GaAs : inhibition by doping

“…500 °C, 800 °C. (a) Gorodnichenko et al [46], (b) Sazhin et al [49], (c) Osvenskii et al [50], (d) Swaminathan et al [51], (e) Djemel et al [53], (f) Guruswamy et al [55]. [15].…”

A Cathodoluminescence Study of the Defects Created by the Degradation of High Power AlGaAs/GaAs Multiemitter Laser Bars

“…For details of the modeled geometry see ref. In figure 6 is represented the Tresca stress as a function of the temperature of the facet defect, and the yield strengths obtained from the literature [12,13]. The modeled geometry consists of fifteen 100 x 100 µm layers including a thickness of nearly 5 µm for the 12 layers composed of Al x Ga 1-x As, 150 µm for both the substrate and the heat sink and 3 µm for the AuSn soldering layer.…”

Defect Structure in Te‐doped GaAs single Crystals after Plastic Deformation (I). Twins and Stacking Faults

“…Tellurium doped single crystals of GaAs have been reported to exhibit lower macroscopic ductility and/or larger flow stress (LAISTER, JENKINS;SAZHIN et al;KHODOS et al;GORODNICHENKO et al;OSVENSKII et al 1969;SWAMINATHAN, COPLEY), lower creep rate (STEINHARDT, HAASEN) as well as lower dislocation mobility (OSVENSKIJ et al 1973;YONENAGA, SUMINO) than GaAs containing other dopants. Doping with Te yields a pronounced reduction of grown-in dislocation density for a carrier concentration > 3 x 1OI8 ~r n -~ (cf.…”