Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

Khalil, Hagir Mohammed; Mazzucato, Simone; Ardalı, Şükrü; Çelik, Ö.; Mutlu, Selman; Royall, B.; Tiraş, E.; Balkan, N.; Puustinen, Janne; Korpijärvi, Ville-Markus; Guina, Mircea

doi:10.1016/j.mseb.2011.12.022

Cited by 11 publications

(9 citation statements)

References 11 publications

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“…Experimentally observed photocurrent oscillations in these structures [15,16], explained in terms of charge accumulation and field domain formation, are shown to be in accord with our theoretical results.…”

Section: Introductionsupporting

confidence: 86%

“…In this paper, we present the theoretical analysis of the carrier capture and escape time in a Ga 0.96 In 0.04 N 0.015 As 0.985 /GaAs multiple quantum wells (MQWs) situated within the built-in field of a GaAs p-i-n structure. Experimentally observed photocurrent oscillations in these structures [ 15 , 16 ], explained in terms of charge accumulation and field domain formation, are shown to be in accord with our theoretical results.…”

Section: Introductionsupporting

confidence: 86%

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Carrier trapping and escape times in p-i-n GaInNAs MQW structures

Khalil

Balkan

2014

Nanoscale Res Lett

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Section: Introductionsupporting

confidence: 86%

Section: Introductionsupporting

confidence: 86%

Carrier trapping and escape times in p-i-n GaInNAs MQW structures

Khalil

Balkan

2014

Nanoscale Res Lett

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“…For example, resonant tunneling into the quasibound states of wide quantum wells can give rise to a large number of well-defined peaks in the differential conductance [14]. Similar quantum confinement effects have also been observed * Corresponding author: oleg.makarovsky@nottingham.ac.uk in optically excited multiquantum well heterostructures with pn junctions [15]. Here we report oscillations in the photocurrent of GaAs p-i-n diodes containing a single AlAs barrier in the undoped, intrinsic layers.…”

Section: Introductionsupporting

confidence: 72%

“…We have observed strong quantum oscillations in the low temperature photocurrent-bias voltage characteristics of GaAs p-i-n diodes containing an AlAs barrier in the intrinsic region. Their physical origin is shown to be qualitatively different from that due to the sequential emission of optical phonons [13,23,24] or from interwell hopping in p-i-n diodes containing multiple quantum wells [15]. We attribute the photocurrent oscillations to the bias-dependent quantization of the ballistic carrier motion in the triangular potential wells by the AlAs tunnel barrier and strong electric field in the intrinsic region of the device.…”

Section: Discussionmentioning

confidence: 86%

Quantum oscillations in the photocurrent of GaAs/AlAsp-i-ndiodes

et al. 2014

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We report large amplitude quantum oscillations and negative differential conductance in the bias voltagedependent photocurrent of p-in GaAs diodes with an AlAs barrier in the intrinsic (i) region. The oscillations appear only when the devices are illuminated with above-band gap radiation. They are strongly suppressed by a weak (ß2 T) in-plane magnetic field. Their period, amplitude, and magnetic field dependence are explained in terms of the quantized motion of confined photoexcited electrons and holes in the triangular potential wells formed by the AlAs barrier and the strong electric field in the intrinsic region. With increasing electric field, the energy levels of the electrons (holes) successively reach the top of their confining potentials, thus leading to a larger overlap of their wave functions with the free carriers in the p-(and n-) doped electrodes and to the observed oscillatory modulation of the recombination rate and photocurrent as a function of the applied voltage. The effect on the photocurrent oscillations amplitude of placing a layer of InAs quantum dots in the AlAs barrier layer is also examined.

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“…Therefore, the increase in photocurrent is accompanied with a decrease in the PL intensity. At the lattice temperature of around T ≈ 100 K, the current oscillations in the I V curves have their maximum amplitude, and they disappear completely at T > 220 K [ 15 , 19 ]. We have performed this experiment at different temperatures from 2 to 300 K. However, we focus our attention to the T = 100 K because at this specific temperature the oscillations present their maximum amplitude.…”

Section: Resultsmentioning

confidence: 99%

Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures

et al. 2012

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The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases when the sample is reverse biased. The nature of these steps, which depends upon the temperature, exciting wavelength and intensity and the number of quantum wells (QWs) in the device, is explained in terms of thermionic emission and negative charge accumulation due to the low confinement of holes in GaInNAs QWs. At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out.

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Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

Cited by 11 publications

References 11 publications

Carrier trapping and escape times in p-i-n GaInNAs MQW structures

Carrier trapping and escape times in p-i-n GaInNAs MQW structures

Quantum oscillations in the photocurrent of GaAs/AlAsp-i-ndiodes

Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures

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