2015
DOI: 10.1021/acs.inorgchem.5b01448
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Temperature and Magnetic Field-Assisted Switching of Magnetization and Observation of Exchange Bias in YbCrO3 Nanocrystals

Abstract: In this paper, we demonstrate an interesting feature in YbCrO3 (YCO) nanocrystals, in which the material shows temperature and external magnetic field-assisted switching (a complete sign reversal) of zero field cooled magnetization (MZFC) and observation of exchange bias (EB) as a result of competing spin interaction at low temperature. This feature can be applied in nonvolatile memories, where, simply by changing the magnitude of the Hext and T, the polarity of the magnetization can be switched between negati… Show more

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Cited by 34 publications
(19 citation statements)
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“…They also show the temperature induced magnetization reversal (i.e. the magnetization changes its polarity from positive to negative at one par ticular temperature known as compensation temperature) and spin reorientation transition at low temperatures (below 50 K) [3,4,8,11]. Below the Neel temperature, the spins of nearest Cr 3+ ions do not possess the perfect antiparallel configuration, therefore, net magnetization is not zero and along with antiferromagnetic behaviour one observes weak ferromagnetic component also.…”
Section: Introductionmentioning
confidence: 99%
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“…They also show the temperature induced magnetization reversal (i.e. the magnetization changes its polarity from positive to negative at one par ticular temperature known as compensation temperature) and spin reorientation transition at low temperatures (below 50 K) [3,4,8,11]. Below the Neel temperature, the spins of nearest Cr 3+ ions do not possess the perfect antiparallel configuration, therefore, net magnetization is not zero and along with antiferromagnetic behaviour one observes weak ferromagnetic component also.…”
Section: Introductionmentioning
confidence: 99%
“…Perovskite orthochromites are very promising materials for thermomagnetic switches, spintronic and thermally assisted magnetic random access memory (TAMRAM) devices [1][2][3][4]. Their general chemical formula is RCrO 3 (R = rare earth or yttrium ion) having distorted orthorhombic structure (Pnma space group) and they exhibit canted antiferromagnetism in the G-type configuration below the Neel temperature (T N ) in the range 112-282 K which depends upon the ionic size of the tri-valent rare-earth ion present [5][6][7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
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“…Most reported TIMR effect from positive to negative occurs in FC mode while few in ZFC mode. 2,10,25,[38][39][40][41][42] Here, the TIMR effect observed in ZFC mode shows dependence on doping concentration and the compensation temperature for x ¼ 0.2 and 0.3 is at near 74 K and almost the same, indicating its intrinsic feature.…”
Section: Samplementioning
confidence: 70%
“…[1][2][3][4][5] This is useful in thermomagnetic switches and thermally assisted random access memories. 6,7 TIMR is defined as a temperature induced crossover of magnetization from a positive to negative value. It has also been reported in other compounds viz.…”
Section: Introductionmentioning
confidence: 99%