Temperature and electric-field dependence of hopping transport in low-dimensional devices

Singh, Mahi R.; Tarutani, Y.; Kabasawa, Uki; Takagi, Kazumasa

doi:10.1103/physrevb.50.7007

Cited by 22 publications

(32 citation statements)

References 41 publications

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“…The functional proportionality of T c to the ratio (T 3 ES /T 2 M ) has been obtained earlier in Ref. [31,32], but with significantly different numerical coefficient. The latter is, however, crucial for comparison with experiment.…”

Section: Strong Localizationmentioning

confidence: 72%

Localization of Charge Carriers in Monolayer Graphene Gradually Disordered by Ion Irradiation

Zion¹,

Haran²,

Бутенко³

et al. 2015

Graphene

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Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C + ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.

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Section: Strong Localizationmentioning

confidence: 72%

Localization of Charge Carriers in Monolayer Graphene Gradually Disordered by Ion Irradiation

Zion¹,

Haran²,

Бутенко³

et al. 2015

Graphene

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show abstract

“…Our approach differs from those of other workers such as Monroe (1985Monroe ( , 1991 and Tiedje and Rose (1980). Our theory predicts that the mobility has three power-law decay branches whose exponents are given as À 1, À 1 and À À 1.…”

Section: Mobilitymentioning

confidence: 78%

“…Here is a parameter which is directly dependent on temperature. Theoretical analysis to understand the above power law was carried out by Schmidlin (1977), Silver and Cohen (1977) and Tiedje and Rose (1980). It was concluded that this power law behaviour in the amorphous solids is due to the multiple trapping mechanism in an exponential DOS.…”

mentioning

confidence: 98%

“…Introduction The dispersive charge transport is the characteristic phenomenon common to many disordered semiconductors (Scharf 1970, Scher and Montroll 1975, Schmidlin 1977, Silver and Cohen 1977, Pfister and Scher 1978, Tiedje and Rose 1980, Monroe et al 1981, Silver et al 1982, Dunstan and Boulitrop 1984, Halperin 1984, Kash 1984, Kristensen and Hvam 1984, Grunewald et al 1985, Monroe 1985, 1991, Orlowski and Abkowitz 1985, Orlowski and Scher 1985, Monroe and Kastner 1986, Grahn et al 1987, Esser 1988, Stordart et al 1988, Singh et al 1994, Golub et al 1997, Thompson and Singh 1997, Butov and Filin 1998, Bottger et al 2000, Arkhipov et al 2001, Godett 2001, Hunt 2001, Shlimak and Pepper 2001. The dispersive transport due to the carrier hopping in band tails is studied by the time dependence of the transient photocurrent, the time dependence shift of the photoluminescence peak and time-of-flight experiments.…”

mentioning

confidence: 99%

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Electric-field-dependent dispersive transport of carriers in band tails of low-dimensional systems

Singh

2003

Philosophical Magazine

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“…The good agreement shows the correctness of the obtained numerical coefficient. The functional proportionality of Tc to the ratio TES 3 /TM 2 has been obtained earlier [40,41], but with significantly different numerical coefficient. The latter is, however, crucial 15 for comparison with experiment.…”

Section: Strong Localizationmentioning

confidence: 81%

Irradiation-induced metal-insulator transition in monolayer graphene

et al. 2019

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A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of heavy and light ions. Degree of disorder was controlled by measurements of the Raman scattering spectra. The temperature dependences of conductivity and magnetoresistance (MR) showed that at low disorder, conductivity is governed by the weak localization and antilocalization regime. Further increase of disorder leads to strong localization of charge carriers, when the conductivity is described by the variable-range-hopping (VRH) mechanism. It was observed that MR in the VRH regime is negative in perpendicular fields and is positive in parallel magnetic fields which allowed to reveal different mechanisms of hopping MR. Theoretical analysis is in a good agreement with experimental data.

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Temperature and electric-field dependence of hopping transport in low-dimensional devices

Cited by 22 publications

References 41 publications

Localization of Charge Carriers in Monolayer Graphene Gradually Disordered by Ion Irradiation

Localization of Charge Carriers in Monolayer Graphene Gradually Disordered by Ion Irradiation

Electric-field-dependent dispersive transport of carriers in band tails of low-dimensional systems

Irradiation-induced metal-insulator transition in monolayer graphene

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