Temperature and bias effects in high resistivity silicon substrates

Reyes, A.C.; El-Ghazaly, S.M.; Dorn, S.; Dydyk, M.

doi:10.1109/mwsym.1996.508469

Cited by 6 publications

(4 citation statements)

References 1 publication

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“…In the case of GaN-on-Si technology, high resistivity Si (HR-Si) substrate showed improved performance by reducing the substrate loss [22][23][24]. However, at high temperatures, charge carriers generate in HR-Si which results in reduced resistivity and increased substrate loss [25,26]. In addition, the manufacturing cost of GaN-on-HR-Si is higher than GaN-on-LR-Si technology [27].…”

Section: Introductionmentioning

confidence: 99%

Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si

Bose

Biswas

Hishiki

et al. 2022

IEICE Electron. Express

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We report the effect of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si (LR-Si). Microstrip lines of finite length and width with ground pads were fabricated on three GaN-on-3C-SiC/LR-Si epitaxial structures with varying nitride layer thicknesses of 3.2, 5.3, and 8.0 𝜇m. The loss performance of microstrip lines on different substrates was evaluated in the frequency range of 0.1 to 9 GHz. The sample with 8.0 𝜇m thick nitride layer showed a minimal loss of 0.3 dB/mm at 9 GHz compared to the other samples. The evaluated data from electromagnetic (EM) simulation also confirmed a decreasing trend of loss with increasing nitride layer thickness. Temperature dependent loss evaluation also verified the above fact.

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Section: Introductionmentioning

confidence: 99%

Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si

Bose

Biswas

Hishiki

et al. 2022

IEICE Electron. Express

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“…A high resistivity Si (HR-Si) substrate has been commonly used for avoiding RF loss which results from a high parasitic capacitance due to conductivity of the sub-strate [7]- [10]. However, at high temperatures, charge carriers generate in the HR-Si which results in reduced resistivity and increased substrate loss [11], [12]. In addition, the manufacturing cost of GaN-on-HR-Si is higher than the GaN on low-resistivity Si (LR-Si) substrate [13].…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications

Wakejima

Bose

Biswas

et al. 2022

IEICE Trans. Electron.

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A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.

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“…Microelectromechanical system (MEMS) packaging technology based on high resistivity silicon (HRS: 4-15 kÁcm) substrates, shows a solution of low cost and high performance for smallvolume packaging. 5,6) The HRS substrate shows the superior microwave properties in addition to the excellent material properties, i.e. lower propagation loss and higher thermal conductivity than LTCC.…”

Section: Introductionmentioning

confidence: 99%

Resonance-free Millimeter-wave Coplanar Waveguide Si Microelectromechanical System Package using a Lightly-doped Silicon Chip Carrier

Song¹,

Lee

Esashi

2005

Jpn. J. Appl. Phys.

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We investigate gauge coupling unification in higher dimensional GUT models with split supersymmetry. We focus on 5d and 6d orbifold GUTs, which permit a simple solution to several problems of 4D GUTs as well as control over GUT scale threshold corrections. In orbifold GUTs, calculable threshold corrections can raise or lower the prediction for α s (M Z ) in a way that depends on the location of Higgs fields. On the other hand, split supersymmetry lowers the prediction for α s (M Z ). Consequently, split supersymmetry changes the preferred location of the Higgs fields in orbifold GUTs. In the simplest models, we find that gauge coupling unification favors higgs doublets that live on the orbifold fixed points instead of in the bulk. In addition, relatively high scales of supersymmetry breaking of 10 10±2 GeV are generically favored.

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Temperature and bias effects in high resistivity silicon substrates

Cited by 6 publications

References 1 publication

Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si

Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications

Resonance-free Millimeter-wave Coplanar Waveguide Si Microelectromechanical System Package using a Lightly-doped Silicon Chip Carrier

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