TEM diffraction contrast images simulation of dislocations

Wu, Wenwang; Schaeublin, R.

doi:10.1111/jmi.12797

Cited by 6 publications

(2 citation statements)

References 28 publications

(35 reference statements)

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“…TEM imaging is widely used for the study of defects in crystalline materials, see [17,[22][23][24]. Defects are perturbations of the crystal symmetry, in the sense that the atoms are displaced from their original position in the perfect crystal.…”

Section: (B) Influence Of Defects and Strainmentioning

confidence: 99%

Symmetries in transmission electron microscopy imaging of crystals with strain

2022

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Transmission electron microscopy (TEM) images of strained crystals often exhibit symmetries, the source of which is not always clear. To understand these symmetries, we distinguish between symmetries that occur from the imaging process itself and symmetries of the inclusion that might affect the image. For the imaging process, we prove mathematically that the intensities are invariant under specific transformations. A combination of these invariances with specific properties of the strain profile can then explain symmetries observed in TEM images. We demonstrate our approach to the study of symmetries in TEM images using selected examples in the field of semiconductor nanostructures such as quantum wells and quantum dots.

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Section: (B) Influence Of Defects and Strainmentioning

confidence: 99%

Symmetries in transmission electron microscopy imaging of crystals with strain

2022

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“…[15] Transmission electron microscopy (TEM) can directly observe local dislocations, mainly using the diffraction effect of atoms on electron beams in crystals, by making the sample into a thin film that the electron beam can pass through. [16,17] The diffraction beam is blocked using an optical grating; hence, the image brightness mainly depends on the intensity of the transmitted beam. When the electron beam passes through the dislocation distortion region, a large diffraction is generated and the corresponding transmission beam intensity is weaker than the base region.…”

Section: Microscopic and Spectroscopic Analysesmentioning

confidence: 99%

Dislocations in Crystalline Silicon Solar Cells

Wang,

Liu,

et al. 2023

Adv Energy and Sustain Res

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Dislocation is a common extended defect in crystalline silicon solar cells, which affects the recombination characteristics of solar cells by forming deep‐level defect states in the silicon bandgap, thereby reducing the lifetime of minority carrier. Hence, reducing the impact of defects on device performance is an effective strategy to optimize the performance of photovoltaic devices. This article reviews the observation and engineering of dislocation in Si solar cell. The structure and deformation of Si can be directly observed by chemical etching combined with electron microscopy. Also, more information about dislocation is obtained indirectly by monitoring the electrical and optical properties of Si. The classification, density, distribution of dislocations, and their interactions with other defects in Si can affect the lifetime of minority carriers and thereby reduce the performance of Si solar cells. In order to achieve higher cell efficiency, crystals with less or even no dislocation should be obtained. In addition to the specification of controlling the relevant parameters during the growth of silicon ingots to obtain the minimum dislocation density, it is necessary to study the behavior of dislocation in Si wafers under the combined action of external stress, temperature, and other defects.

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