TEM Analysis of Blisters on Silicon Surface Formed by Hydrogen Ion Irradiation

Muto, Shunsuke; Tanabe, T.; Igarashi, Shinichi

doi:10.1238/physica.topical.108a00019

Cited by 12 publications

(13 citation statements)

References 2 publications

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“…These results allowed us to estimate the gas fraction of the total amount of implanted ions actually involved in blister formation. The present study, along with several of our other studies on blistering [8][9][10][11][12][13]16,17) have fully elucidated the evolution of substructures associated with blistering processes in covalent-bonded brittle materials. …”

Section: Discussionmentioning

confidence: 55%

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Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy

Muto

Enomoto

2005

Mater. Trans.

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Internal structures of surface blisters and their precursors in Si formed by H þ , D þ and He þ irradiation were examined by cross-sectional transmission electron microscopy (XTEM). The skin structures of H þ -D þ -and He þ -blisters reflected the difference in the damage accumulation, and chemical interaction between the implant ion and silicon. These differences had a direct influence on the defect structures of the damaged layer, which played essential roles in the blistering mechanisms. It was found that blister skin thickness derived by grazing incidence electron microscopy (GIEM) and electron energy-loss spectroscopy (EELS) was underestimated compared to direct measurement by XTEM. The origin of this discrepancy is discussed.

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Section: Discussionmentioning

confidence: 55%

“…The inner wall contains a high density of defects and this part should bear most of the plastic deformation associated with blistering. 17) A high-resolution (HR) lattice image of this highly defective portion is shown in Fig. 3(a), and its fast Fourier transform (FFT) power spectrum in Fig.…”

Section: Methodsmentioning

confidence: 99%

Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy

Muto

Enomoto

2005

Mater. Trans.

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“…A part of results on Si are already reported in Ref. 9). In the present paper the results on SiC are reported.…”

Section: Introductionmentioning

confidence: 84%

Cross Sectional TEM Observation of Gas-Ion-Irradiation Induced Surface Blisters and Their Precursors in SiC

2003

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Cross sectional structures of surface blisters and their precursors in SiC formed by H þ , D þ and He þ irradiation were examined with transmission electron microscopy and electron energy-loss spectroscopy. The substructures of the H þ -and D þ -irradiated samples showed similar features, and experimental results suggested that H 2 and CH 4 bubbles nucleated after H(D)-trapping sites were saturated and the first nucleated bubbles grew by absorbing the gas molecules formed by further ion irradiation, followed by lift-up of the surface layer with increasing the internal pressure. The implanted hydrogen atoms other than those forming bubbles were scattered in atomic form, preferably bonded to carbon atoms. On the other hand the substructure of He þ irradiated sample was very similar to that of metals and other materials irradiated by He þ , and it is considered that the formation mechanism of He-blister is common for most materials.

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“…The bond survival rate, r, also demonstrates the effect of hydrogen, and the value r ¼ 0:2 for silicon roughly agrees with the upper limit when hydrogen is implanted into silicon. 12) The complex behavior of hardness in -quartz and silica glass are beyond the present formulation, though we already discussed the residual part characteristic of SiO 2 polytypes, other than the normal part expressed by eq. (18).…”

Section: )mentioning

confidence: 94%

“…This is due to the fact that the softened phase #3 consists of hydrogen-terminated atomic clusters of $1 nm in size and is deformed by shear between the clusters. 12) In contrast, the deformation in the amorphous structure proceeds via local rearrangements of atomic configurations, as will be discussed in Section 5.4.…”

Section: Initial Increase In Hardness In Crystalline Materialsmentioning

confidence: 99%

Change in Mechanical Properties of Ion-Irradiated Ceramics Studied by Nanoindentation

2006

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Changes in hardness of several representative ceramics and semiconductors associated with ion irradiation were systematically studied using a combination of nanoindentation and finite element analysis. We established a new method for obtaining the precise hardness of the embedded damaged layer of ion-irradiated samples. The method was applied to silicon carbide, -quartz, silica glass and silicon, which enabled us to semi-quantitatively discuss changes in their mechanical properties with irradiation-induced structural changes on the basis of experimentally obtained material parameters. Finally, we propose a new atomistic mechanism for plastic deformation of covalent amorphous materials. The present results will provide a standard framework for discussing mechanical property changes in ceramics with energetic particle irradiation.

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TEM Analysis of Blisters on Silicon Surface Formed by Hydrogen Ion Irradiation

Cited by 12 publications

References 2 publications

Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy

Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy

Cross Sectional TEM Observation of Gas-Ion-Irradiation Induced Surface Blisters and Their Precursors in SiC

Change in Mechanical Properties of Ion-Irradiated Ceramics Studied by Nanoindentation

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