Tellurium delta‐doped InGaP layers grown by metalorganic vapour phase epitaxy

The performance of n+-InGaP(Te)/p+-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics. Several limitations for as grown and annealed TJ can be attributed to the Te doping of InGaP and its behavior at the junction interface. Te atoms in InGaP tend to get attached at step edges, resulting in a Te memory effect. In this work, we use the peak tunneling current (Jpk) in this TJ as a diagnostic tool to study the behavior of the Te dopant at the TJ interface. Additionally, we used our understanding of Te behavior at the interface, guided by device modeling, to modify the Te source shut-off procedure and the growth rate. These modifications lead to a record performance for both the as-grown (2000 A/cm2) and annealed (1000 A/cm2) high band gap tunnel junction.

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Abrupt Te doping of GaInP grown by molecular beam epitaxy for solar cell applications

Sun

Hool

et al. 2023

Journal of Applied Physics

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We report abrupt Te doping of GaInP solar cells grown by molecular beam epitaxy (MBE) through the use of a low substrate temperature of 420 °C and subsequent elimination of surface segregation. First, a Te surface pre-dose layer and reduced substrate temperature were required to achieve abrupt profiles at doping >1 × 1018 cm−3 in calibration samples, while reduced doping of 5.7 × 1017 cm−3 did not require the surface layer. Next, we demonstrate front-junction n+/p GaInP cells with an improved internal quantum efficiency (IQE) after Te doping of the n-type emitter directly attributable to an ∼2.5× higher carrier diffusion length, with IQE-derived short-circuit current density increasing from 13.2 to 14.1 mA/cm2. Rapid thermal annealing further boosted the performance through improvements in the minority carrier lifetime of the p-GaInP base. The use of low substrate temperature in MBE-grown GaInP enables abrupt Te doping profiles to be attained in a straightforward manner and is promising for both solar cells and tunnel junctions.

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Tellurium delta‐doped InGaP layers grown by metalorganic vapour phase epitaxy

Cited by 3 publications

References 13 publications

Atomic spectrometry update. Review of advances in the analysis of metals, chemicals and functional materials

Atomic spectrometry update. Review of advances in the analysis of metals, chemicals and functional materials

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Abrupt Te doping of GaInP grown by molecular beam epitaxy for solar cell applications

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