Tellurium antisites in CdZnTe

The growth of high resistivity CdTe and (Cd,Zn)Te is successfully performed with different kinds of doping. In the literature intentionally undoped as well as doped crystals are presented with resistivities up to 10 10 Ωcm. In this paper we review the growth of high resistivity CdTe and (Cd,Zn)Te. The mechanism of compensation is discussed regarding the different dopants and deep levels, which seem to be responsible for the high resistivity. A common compensation model explains the high resistivity by deep levels. The doping and the influence on the compensation mechanism is compared for several elements like tin, germanium and chlorine. The material properties and the crystal quality of undoped and doped CdTe as well as (Cd,Zn)Te are shown. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

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“…• Indium and chlorine for the growth of CdTe for the processing of high-resolution spectrometers [15,16].…”

Section: Introductionmentioning

confidence: 99%

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

Fiederle¹,

Babentsov

Franc

et al. 2003

Cryst. Res. Technol.

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“…Alternatively, native deep level defects can also be introduced during manufacture of the detector material. Chu et al 43 produced high resistivity p-type Cd0.9Zn0.1Te crystals using a modified Bridgman technique by doping In impurity at a level of 1-5 x10 15 cm -3 . The negative effect of the doping with deep donors is the reduction of the mobility-lifetime products of the charge carriers.…”

Section: Defects In Czt Crystalmentioning

confidence: 99%

“…Transition in type of semiconductivity was attributed to the increase in Cd vacancies and presence of ionized Te atoms located in Cd vacancies as TeCd + or TeCd2 + . 43 In this investigation, both cathodic and anodic potentials were applied for controlled growth of nanowires. Application of anodic potentials such as 0.7 and 0.3V resulted in dissolution of species; particularly Cd.…”

Section: Compound Analysis Through Xrdmentioning

confidence: 99%

High Density Nano-Electrode Array for Radiation Detection

Misra¹

2010

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“…[1][2][3][4][5] During the past two decades, CdZnTe (CZT) crystals with bulk resistivity in excess of 10 10 · cm have become available. To date, most researchers have focused on improving the energy resolution of CZT detectors, and various electrode configurations and metal contacts have been explored.…”

Section: Introductionmentioning

confidence: 99%

Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation

Zhao

Ouyang

et al. 2012

AIP Advances

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A CdZnTe detector based on high-quality Cd0.9Zn0.1Te crystals was developed and tested as a monitor in high-intensity radiation fields. The current–voltage measurements were performed using thermally evaporated Au contacts deposited on the crystals, which revealed resistivity of 1010 Ω·cm. Typical leakage current for the planar devices was ∼3 nA for a field strength of 1000 V·cm–1. The test results show that the CdZnTe detector has a fast time response, with a rise time of approximately 2 ns, when exposed to transient and pulsed irradiation of X-rays or electron beams. The decay of current curves is observed and discussed according to charge carrier trapping effects and space-charge accumulation mechanisms. It is suggested that the current decreases quickly with strengthening of the electric field, possibly because of charge de-trapping

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Tellurium antisites in CdZnTe

Abstract: Native defects and oxygen and hydrogen-related defect complexes in CdTe: Density functional calculations J. Appl. Phys.

Cited by 129 publications

References 9 publications

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

High Density Nano-Electrode Array for Radiation Detection

Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation

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