Tellurium activities across the AlAl2Te3 system

Giustini, A.; Piacente, V.; Scardala, Paolo

doi:10.1016/s0925-8388(96)02497-8

Cited by 4 publications

(1 citation statement)

References 5 publications

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“…Generally, the formation energy of Al 2 Te 3 is relatively low (−0.71 eV atom −1 ) in Al-Te systems, and further referring to Al-Te binary phase diagram, this IRL is deemed to be mainly composed of Al 2 Te 3 . [57,58] In Figure S21, Supporting Information, the growth rate of the Al 2 Te 3 layer is rapid with increasing aging time, and this layer is found to be brittle at the Al/Ge 0.9 Sb 0.1 Te interface. Li et al reported that the thickness of the Al 2 Te 3 layer increases rapidly from ≈8 to ≈23 μm at Al 66 Si 34 /Ge 0.9 Sb 0.1 TeB 0.01 interface after 16 days of aging.…”

Section: Reliability Of Ti-34al/ge09sb01te Jointsmentioning

confidence: 99%

Realizing a Superior Conversion Efficiency of ≈11.3% in the Group IV‐VI Thermoelectric Module

Cheng,

Yin,

Wang

et al. 2024

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GeTe‐based materials exhibit superior thermoelectric performance, while the development of power generation devices has mainly been limited by the challenge of designing the interface due to the phase transition in GeTe. In this work, via utilizing the low‐temperature nano‐Ag sintering technique and screening suitable Ti‐Al alloys, a reliable interface with excellent connection performance has been realized. The Ti‐Al intermetallic compounds effectively inhibit the diffusion process at Ti‐34Al/Ge0.9Sb0.1Te interface. Thus, the thickness of the interfacial reaction layer only increases by ≈2.08 µm, and the interfacial electrical contact resistivity remains as low as ≈15.2 µΩ cm2 even after 30 days of isothermal aging at 773 K. A high conversion efficiency of ≈11.3% has been achieved in the GeTe/PbTe module at a hot‐side temperature of 773 K and a cold‐side temperature of 300 K. More importantly, the module's performance and the reliability of the interface remain consistently stable throughout 50 thermal cycles and long‐term aging. This work promotes the application of high‐performance GeTe materials for thermoelectric power generation.

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Section: Reliability Of Ti-34al/ge09sb01te Jointsmentioning

confidence: 99%

Realizing a Superior Conversion Efficiency of ≈11.3% in the Group IV‐VI Thermoelectric Module

Cheng,

Yin,

Wang

et al. 2024

Small

View full text Add to dashboard Cite

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Al-Te (Aluminum - Tellurium)

Predel¹

2006

Ac-Ag ... Au-Zr

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Atomic and electronic origin of robust off-state insulation properties in Al-rich AlxTey glass for ovonic threshold switching applications

Li,

Tian,

Wang

et al. 2023

Journal of Applied Physics

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Ovonic threshold switching (OTS) selectors play a critical role in suppressing the sneak-path current of three-dimensional crossbar integration circuits. Compared to conventional nonmetal-telluride OTS selectors, selectors based on AlxTey glass are found to have both satisfactory on-state current and selectivity. However, it is unclear why the Al-rich AlxTey glass-based OTS selectors have robust insulation properties for reducing the off-state current. This work reveals the structure–property correlations of amorphous AlxTey at the atomic scale by first-principles calculations. It is found that the stoichiometric Al2Te3 glass tends to have a clean bandgap owing to the covalent and dative bonds formed by non-equivalent sp3-hybridized Al orbitals and the lone-pair electrons of Te. Unexpectedly, for Al-rich AlxTey glass (Al2.21Te2.79), the Al–Al bonds formed by redundant Al-atoms have an integrated crystal orbital bond index (ICOBI) of 0.8–0.9, which is much larger than that of Al–Al bonds in pure metals (0.227), indicating they are covalent. It is the covalent Al–Al bonds that ensure the robust insulation characteristics of Al-rich AlxTey glass, while the Te–Te interaction in the Al-poor AlxTey glass (Al1.79Te3.21) produces midgap states, thereby reducing the insulativity. The presented atomic and electronic pictures here will provide useful theoretical insights for designing OTS selectors with improved performances.

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Tellurium activities across the AlAl2Te3 system

Cited by 4 publications

References 5 publications

Realizing a Superior Conversion Efficiency of ≈11.3% in the Group IV‐VI Thermoelectric Module

Realizing a Superior Conversion Efficiency of ≈11.3% in the Group IV‐VI Thermoelectric Module

Al-Te (Aluminum - Tellurium)

Atomic and electronic origin of robust off-state insulation properties in Al-rich AlxTey glass for ovonic threshold switching applications

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