Telecommunication-Wavelength Lasing in Er-doped GaN Multiple Quantum Wells at Room Temperature

Abstract

We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-µm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity as functions of pump-fluence, spectrallinewidth-narrowing, excitation-length.