Technology Roadmap for Beyond 5G Wireless Connectivity in D-band

Abstract

Wireless communication in millimeter wave bands, namely above 20 GHz and up to 300 GHz is foreseen as a key enabler technology for the next generation of wireless systems. The huge available bandwidth is contemplated to achieve high data rate wireless communications, and hence, to fulfill the requirements of future wireless networks. Several Beyond 5G applications are considered for these systems: high capacity backhaul, enhanced hot-spot kiosk as well as short-range Deviceto-Device communications. In this paper we propose to discuss the trade-offs between scenario requirements and current silicon technologies limits to draw a technology roadmap for the next generation of wireless connectivity in D-band.

6G networks: Beyond Shannon towards semantic and goal-oriented communications

“…The societal acceptance of a new technology is already at a critical stage and future 6G networks are required to address societal and environmental issues rather than just creating new business opportunities and added value for operators, industry and IT companies. To this end, multiple technological enablers for beyond 5G networks are currently investigated following roadmaps to enable 6G services by 2030 [1,6,7]. Some of the use cases in 6G will evolve from the emerging 5G applications, others will rise from new societal and economical needs.…”

“…The most representative trend in today wireless communications is the unrelenting increase in signal bandwidths to achieve higher link capacity, increasing the network capacity and improve the user's QoE. This is also a major well accepted mega-trend for 6G: for example, one goal is to achieve a factor of 100 increase in capacity by accessing the huge available bandwidth either in the sub-THz D-band (above 90 GHz) or in the visible light spectrum [1,7,28].…”

Body-Centric Terahertz Networks: Prospects and Challenges

“…Akyildiz et al [3] 2010 Presents THz communications for NNs, channel modeling, and routing protocols Jornet et al [137] 2012 Introduces the internet of multimedia nanothings (IoMNT), a possible architecture for IoMT, and networking protocols Rikhtegar et al [144] 2013 Studies molecular and electromagnetic communications, nano-devices, and networking for NNs Balasubramaniam et al [139] 2013 Presents various applications of NNs and how to connect the NNs with the outside world Akyildiz et al [3], [4] 2014 Focuses on THz applications at the nano and macro levels and presents possible THz band transceivers and antennas Miraz et al [141] 2015 Overviews connecting the NNs with the internet of things (IoT) and its applications Dressler et al [142] 2015 Focuses on healthcare applications using in-body NNs and presents various networking architectures Petrov et al [145] 2016 Presents an overview of the THz band for future wireless communication networks Rizwan et al [138] 2018 Focuses on big data analytics, such as data gathering, processing, feature extraction, and predictive modeling for healthcare applications Ghafoor et al [135] 2019 Presents applications of the THz band and various MAC layer protocols for THz communications Lemic et al [146] 2019 Focuses on THz communications for NNs and its applications Sarieddeen et al [22] 2020 Presents an overview of THz communication, sensing, imaging, and localization along with their applications This paper 2020 Focuses on the issues of THz devices, communications, and networking for THzband body centric networks, highlighting various applications in the health industry also present the latest research highlighting that THz-band communications can help in pandemic response management by detecting the Coronavirus disease (COVID- 19). We further present various future research challenges for THz-band BCNs and their applications.…”

Theoretical and Experimental Substractions of Device Temperature Determination Utilizing I-V Characterization Applied on AlGaN/GaN HEMT

“…The commercial wireless market requires more demanding microwave operation with higher requirements in terms of self-heating, high operating voltage and inherent processes and their impact on the device reliability in consumer electronics [1][2][3]. The presence of two-dimensional electron gas (2DEG) in a gallium nitride (GaN) based structure presents the potential to fabricate high electron mobility transistors (HEMTs) with Schottky diodes employed as excellent devices for application in the microwave and power conversion field.…”