Technology Computer‐Aided Design Model for SiGe Oxidation and Ge Diffusion Along Oxide/SiGe Interfaces
Christoph Zechner,
Nikolas Zographos
Abstract:During the oxidation of SiGe regions, Si is preferably incorporated into the oxide, while Ge atoms accumulate at the SiGe side of the interface. Moreover, during oxidation of fin structures of Si/SiGe superlattices, Ge atoms diffuse from SiGe regions to Si regions along the oxide/SiGe interface, as recently reported. This surface diffusion can be used for the formation of Si nanowires surrounded by SiGe, and possibly for the fabrication of gate all‐around transistors. Herein, a new process simulation model is … Show more
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