Technology and Performance of THz Hot-Electron Bolometer Mixers

Ilin, K.; Stockhausen, A.; Scheuring, A.; Siegel, M.; Semenov, A. D.; Richter, Heiko; Huebers, Heinz-Wilhelm

doi:10.1109/tasc.2009.2018266

Cited by 6 publications

(7 citation statements)

References 21 publications

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“…1. In both cases, the T C dependence on thickness and on width, the suppression of superconductivity can be described in terms of the proximity effect model [7,13,14] (solid line in Fig. 1).…”

Section: Density Of Critical Current: Dependence On Width and Temperamentioning

confidence: 98%

“…Additionally, this interest is warming up by a broad range of applications of thin superconducting films used for the development of fast and sensitive detectors [6] and mixers [7] of radiation. These devices operate at temperatures typically well below the critical temperature of the superconducting transition T C .…”

Section: Introductionmentioning

confidence: 99%

“…We present results on a systematic study of the temperature dependencies of the critical current density in Nb bridges with thickness about or smaller than 15 nm, which are of interest for the development of detectors of electro-magnetic radiation. While the HEB mixers are typically of few micrometers in width [7], the SNSPD devices are meander lines with width W 6 100 nm [6]. Therefore the j C (T)-dependencies were measured on a series of Nb bridges with different width for a better understanding of the influence of the superconducting strip dimensions on the critical current density.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of thickness, width and temperature on critical current density of Nb thin film structures

Ilin

Rall

Siegel

et al. 2010

Physica C: Superconductivity

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Section: Density Of Critical Current: Dependence On Width and Temperamentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Influence of thickness, width and temperature on critical current density of Nb thin film structures

Ilin

Rall

Siegel

et al. 2010

Physica C: Superconductivity

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“…The multilayer consists of a thin adherent layer of d ≈ 10 nm thick Nb, an Au layer (d ≈ 80 nm) and on top a 70 nm thick NbN layer. The NbN layer is functioning as a sacrificial layer and the Au layer enables the contact improvement of the device and could also be used to implement a planar antenna for further THz investigations with thin film pnictide detectors [12].…”

Section: B Patterning Processmentioning

confidence: 99%

“…In spite of several publications on studies of photo-response of pnictide bulk samples [9,10], there is lack of results obtained on micrometer and sub-micrometer sized structures made from pnictide thin films. Nevertheless, a decrease in lateral dimensions is required for improvement of the bolometer sensitivity, which is proportional to the detector volume [11] and for embedding of detectors into planar antenna structures for applications in THz spectra range [12]. In this paper, we present experimental investigations of the photo-response of patterned Fe/Ba-122 bi-layers deposited on different types of substrate.…”

Section: Introductionmentioning

confidence: 99%

Infrared Photo-Response of Fe-Shunted Ba-122 Thin Film Microstructures

Rehm

Henrich²,

Hofherr³

et al. 2013

IEEE Trans. Appl. Supercond.

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We present a study of the response to pulsed infrared radiation of Fe-layer shunted pnictide thin film microstructures. The thin film multilayer consisting of 20 nm thick Fe-buffer, 50 nm thick Ba(Fe,Co) 2 As 2 film and gold protection layer were deposited on heated MgO and MgAl 2 O 4 substrates by pulsed-laser deposition. The multilayers were patterned into 5 to 8 µm wide and 5 µm long microbridges by electron-beam lithography and ion-milling technique. The microbridges show T c ≈ 20 K and a critical current density up to 2.56 MA/cm 2 at T = 10 K. The photo-response of Fe-shunted Ba(Fe,Co) 2 As 2 thin film microbridges to infrared radiation was studied in a wide range of incident optical power, operation temperature and bias current. We have found that the electron energy relaxation in studied multilayers is dependent on substrate material and is 1.75 times faster in case of MgAl 2 O 4 characterized by lattice matching to pnictide film in comparison to MgO substrate.Index Terms-barium compounds, high temperature superconductors, infrared detectors, superconducting photodetectors.

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Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

Dochev¹,

Desmaris²,

Pavolotsky³

et al. 2011

Supercond. Sci. Technol.

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We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high-resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (T C) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature T C = 11.3 K and critical current density of about 2.5 MA/cm 2 at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot electron bolometer device fabrication for THz mixer applications.

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Technology and Performance of THz Hot-Electron Bolometer Mixers

Cited by 6 publications

References 21 publications

Influence of thickness, width and temperature on critical current density of Nb thin film structures

Influence of thickness, width and temperature on critical current density of Nb thin film structures

Infrared Photo-Response of Fe-Shunted Ba-122 Thin Film Microstructures

Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

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