Technologies for creating radiation-resistant VLSI

Abstract

The technology of radiation-resistant CMOS VLSI is based on industrial IC technology. The design uses feedback circuits and guard rings to compensate for single effects of cosmic particles (SEE). In most critical cases, these influences in digital circuits lead to single faults (SEU), which temporarily disrupt the state of memory cells, to latching (SEL), and in the long term to a catastrophic change of state. Various space programs confirm great prospects for their use in future space structures. The article discusses the effects of using radiation-resistant CMOS technology, technology based on a silicon-on-sapphire structure, CMOS technology on an insulating substrate taking into account typical characteristics, SIMOX-SOI technology, which consists in separation by implantation of oxygen ions. In new designs of circuits, more advanced algorithms should be implemented for the future.