Technological Regimes Searching the Effect of Thermal Annealing on Optical and Electrical Properties of Co/ZnO Multilayer Thin Film of Different Thickness

Abstract

Abstract:The fabrication of the Co/ZnO multilayer thin film for studying the influence of thermal annealing on optical and electrical properties is presented in this paper. In this case, at first Co/ZnO multilayer films were prepared by e-beam evaporation in a vacuum at a pressure of 3.2×10 -5 torr. In the multilayer, the thickness of Co and ZnO was kept same. Each layer thickness was varied from 5 nm to 15 nm and repeated three times. The deposition rate of the Co and ZnO thin films are about 1.33 nm/s & 1.43 nm/s respectively. The optical and electrical properties of the deposited and annealed Co/ZnO films had been studied. The average transparency of Co/ZnO multilayer thin film is roughly about 55% and decreased with increasing film thickness and increased when annealed. The T. C. R. of deposited and annealed Co/ZnO multilayer thin films in all cases is negative which indicates that the thin films are semiconducting in nature.