Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

Matsunami, Hiroyuki

doi:10.1143/jjap.43.6835

Cited by 178 publications

(135 citation statements)

References 67 publications

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“…1 Furthermore, SiC is preferred to other wide-bandgap semiconductors because of its ability to form a metal-oxide-semiconductor field-effect transistor (MOSFET) with thermally grown SiO 2 as a gate oxide. For a gate oxide, reliability characteristics such as the timedependent dielectric breakdown (TDDB) and the stability of the threshold voltage under gate stress are very important properties.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Sometani

Okamoto

Harada

et al. 2015

Journal of Applied Physics

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The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO2/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO2/4H-SiC interface. On the basis of Arrhenius plots of the PF current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO2 films on the Si-face of 4H-SiC.

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Section: Introductionmentioning

confidence: 99%

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Sometani

Okamoto

Harada

et al. 2015

Journal of Applied Physics

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“…However, for fabricated SiC-MOSFETs, low on-resistances expected from the material properties of SiC have not been realized. 1 This is considered to be caused by low channel mobility, which is attributed to high trap densities at and/or near the SiO 2 -SiC interface. 2 Therefore, an understanding of the structure of the interface and the formation mechanism of the interface layer are important to realize SiC-MOSFETs with the necessary quality.…”

Section: Introductionmentioning

confidence: 99%

Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

Kouda

Hijikata

Yagi

et al. 2012

Journal of Applied Physics

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The oxygen partial pressure dependence of the Silicon carbide (SiC) oxidation process was investigated using in-situ spectroscopic ellipsometry at oxygen partial pressures between 1 and 0.02 atm for 4 H-SiC (0001) Si- and (000−1) C-faces. Analyses of the interface structure between the oxide and SiC indicate that the interface layer has a modified SiC-like structure around 1 nm thick accompanied by oxide growth; the structure and thickness do not change after an oxide growth of about 7 nm. The oxide thickness dependence of the growth rate at sub-atmospheric oxygen pressures is similar to that at 1 atm pressure, that is, just after oxidation starts, the growth rate rapidly decreases as the oxidation proceeds. After an oxide growth of about 7 nm thick, the deceleration of the growth rate suddenly changes to a gentle slope. The thickness at which deceleration changes depends slightly on both the oxygen partial pressure and surface polarity of the SiC substrate. The origins of these two deceleration stages, i.e., rapid and gentle decelerations, are discussed from their pressure dependencies based on the SiC oxidation model taking into account the interfacial emission of Si and C atoms. The formation and structures of the interface layers are also discussed in relation to the oxidation mechanisms.

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“…The quality of homoepitaxial layers depends directly on the ability to control the uniformity, layer thickness and doping density while at the same time suppressing the formation of defects and, particularly in SiC homoepitaxy, avoiding polytype mixing. The polytype mixing can be reduced or completely eliminated by a method called "stepcontrolled epitaxy" 32 . This technique uses surface steps to replicate the substrate polytype to the layers.…”

Section: Chemical Vapor Deposition (Cvd) Of Sicmentioning

confidence: 99%

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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SiC is a wide bandgap semiconductor with many attractive properties. It has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness. Typically, SiC homoepitaxial layers are grown using the chemical vapor deposition (CVD) technique. Experimental studies of SiC CVD have been limited to post-process measuring of the layer rather than in situ measurements. In most cases, the observations are presented in terms of input conditions rather than in terms of the unknown growth condition near the surface. This makes it difficult to really understand the underlying mechanism of what causes the features observed experimentally. With help of computational methods such as computational fluid dynamic (CFD) we can now explore various variables that are usually not possible to measure. CFD modeling of SiC CVD, however, requires inputs such as thermochemical properties and chemical reactions, which in many cases are not known. In this thesis, we use quantum chemical calculations to provide the missing details complementary to CFD modeling.We first determine the thermochemical properties of the halides and halohydrides of Si and C species, SiHnXm and CHnXm, for X being F, Cl and Br which were shown to be reliable compared to the available experimental and/or theoretical data. In the study of gas-phase kinetics, we combine ab initio methods and DFTs with conventional transition state theory to derive kinetic parameters for gas phase reactions related to Si-H-X species. Lastly, we study surface adsorptions related to SiC-CVD such as adsorptions of small C-H and Si-H-X species, and in the case of C-H adsorption, the study was extended to include subsequent surface reactions where stable surface products may be formed. iv SammanfattningSiC är ett halvledarmaterial med stort bandgap som har många attraktiva egenskaper. Det har fått särskilt mycket uppmärksamhet inom kraftkomponenter och sensorer, men också för tillämpningar inom biomedicin och biosensorer. Detta beror på materialets stora bandgap, förmågan att klara höga elektriska fält, goda värmeledningsförmåga och kemiska stabilitet. Epitaxiska skikt av SiC för kommersiella tillämpningar tillverkas med hjälp av kemisk ångdepo-sition (Chemical Vapor Deposition, CVD). Experimentella studier av SiC CVD begränsas till mätningar som görs i efterhand, snarare än under processens gång. För det mesta görs observationer med utgångspunkt från processens ingångsvärden istället för från de okända tillväxtförhållandena vid ytan. Detta gör det svårt att verkligen förstå de underliggande mekanismerna för de observerade experimentella resultaten. Med hjälp av beräkningsmetoder, såsom computational fluid dynamics (CFD) kan vi utforska olika variabler som vanligtvis inte går att mäta. Dock kräver CFD-modellering av SiC CVD ingångs-data i form av termokemiska egenskaper och kemiska reaktion...

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Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

Cited by 178 publications

References 67 publications

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

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