Techniques for the crystal growth of silicon ingots and ribbons

Ciszek, T.F.

doi:10.1016/0022-0248(84)90166-0

Cited by 63 publications

(29 citation statements)

References 26 publications

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“…A plethora of such growth techniques exists, 29,33 with different crucibles, growth substrates, and crystal pulling mechanisms. To distinguish between these different growth techniques, this study will adopt the following set of definitions:…”

Section: Directionally-solidified Ingot-grown Mc-simentioning

confidence: 99%

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Buonassisi

Istratov

Pickett

et al. 2006

Progress in Photovoltaics

174

106

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We present a comprehensive summary of our observations of metal-rich particles in multicrystalline silicon (mc-Si) solar cell materials from multiple vendors, including directionally-solidified ingot-grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal-rich particles are assessed by synchrotron-based analytical x-ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal-rich particles can be observed (metal silicide nanoprecipitates and metal-rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc-Si materials can largely be explained by variations in crystal

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Section: Directionally-solidified Ingot-grown Mc-simentioning

confidence: 99%

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Buonassisi

Istratov

Pickett

et al. 2006

Progress in Photovoltaics

174

106

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“…While a variety of approaches are available for kerfless wafer production, [1][2][3][4]6 we posit that attempts to commercialize kerfless wafers have historically been inhibited by low bulk minority-carrier lifetime (s bulk ). Wafers from vertical ribbon growth processes 2 contain average dislocation densities of 10 4…”

Section: 6mentioning

confidence: 99%

Effective lifetimes exceeding 300 μs in gettered p-type epitaxial kerfless silicon for photovoltaics

Powell

Hofstetter

Fenning

et al. 2013

Applied Physics Letters

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We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low as (3.2 ± 2.2) × 109 cm−3) suggest that minority-carrier lifetime is not limited by dissolved iron. An increase in gettered lifetime from <20 to >300 μs is observed after increasing growth cleanliness. This improvement coincides with reductions in the concentration of Mo, V, Nb, and Cr impurities, but negligible change in the low area-fraction (<5%) of dislocated regions. Device simulations indicate that the high bulk lifetime of this material could support solar cell efficiencies >23%.

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“…Therefore, we are interested to find the values of the pressure difference p for which there exists x 1 A(0,x 0 ) and a solution z(x) of Eq. (4) which satisfies (5) and z 00 (x)40.…”

Section: Pressure Limitsmentioning

confidence: 96%

The effect of the pressure difference across the free surface on the static meniscus shape in the case of ribbon growth by edge-defined film-fed growth (E.F.G.) method

Bálint

2008

Journal of Crystal Growth

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Techniques for the crystal growth of silicon ingots and ribbons

Cited by 63 publications

References 26 publications

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Effective lifetimes exceeding 300 μs in gettered p-type epitaxial kerfless silicon for photovoltaics

The effect of the pressure difference across the free surface on the static meniscus shape in the case of ribbon growth by edge-defined film-fed growth (E.F.G.) method

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