2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) 2013
DOI: 10.1109/apec.2013.6520573
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Techniques for reducing parasitic loss in switched-capacitor based DC-DC converter

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Cited by 6 publications
(5 citation statements)
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“…Moreover, by employing a sampled current compensation method, the estimation error is minimized. Employing an accurate model of different kind of energy converters is considered for different purposes such as loss minimization [34][35][36]. In [34], the efficiency comparison of the SiC-MOSFET and Si-IGBT-based converters is performed for DC-DC interleaved converters considering a range of switching frequency and output inductances.…”
mentioning
confidence: 99%
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“…Moreover, by employing a sampled current compensation method, the estimation error is minimized. Employing an accurate model of different kind of energy converters is considered for different purposes such as loss minimization [34][35][36]. In [34], the efficiency comparison of the SiC-MOSFET and Si-IGBT-based converters is performed for DC-DC interleaved converters considering a range of switching frequency and output inductances.…”
mentioning
confidence: 99%
“…In [34], the efficiency comparison of the SiC-MOSFET and Si-IGBT-based converters is performed for DC-DC interleaved converters considering a range of switching frequency and output inductances. Reference [35] is focused on a switched-capacitor version of the DC-DC buck converter. Two techniques for reducing top-plate parasitic loss are proposed.…”
mentioning
confidence: 99%
“…Whereas, high voltage I/O devices were used for C 2a & C 2b , which need to support a maximum voltage of 2V in across them. For MOS capacitors soft connection of the n-well [16], [12] was adopted. As shown in Fig.9, the n-well of the MOS transistor is biased with a high resistance to the output node V out .…”
Section: Mos Implementation Of the Sub-modulementioning
confidence: 99%
“…Second and more importantly, the proposed topology offers better performance in terms of reducing bottom-plate parasitic loss, which is a significant component of the overall loss for on-chip implementation of the charge-transfer capacitors [11], [16]. On-chip capacitors offer a much higher energy density compared to their off-chip counterparts, but they suffer from having considerably more parasitic capacitance (associated with their bottom or top plate and the substrate).…”
Section: Introductionmentioning
confidence: 99%
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