Abstract:In order to cope with the problems with scanning electron microscopes for semiconductor manufacturing, the ability to measure the focal depth and incident angle of an electron beam is required. A technique for estimating the angle of incidence and the depth of focus has been devised. The main feature of the technique is to employ the specimen with a special pit, which is formed from sidewalls with an accurate tilt angle and a surface structure. In this work, the pit was formed on a (100) silicon-crystal substr… Show more
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