The oxygen-sensing mechanism on gallium oxide sensors has been analyzed in the presence of an oxygen gas flow at elevated temperatures: 700, 750, 800, 850, 900, 950, and 1000 8C. For the present study, the sensors were prepared based on a b-Ga 2 O 3 single crystal in a sandwich structure using three different shapes of the electrodes: quadratic-spot, plate, and mesh type. The results revealed that the oxygen-sensor performances (sensitivity and response/recovery time) of the b-Ga 2 O 3 single crystal depended on the operating temperature.A maximum sensitivity of $2.0 was obtained at temperature around 800 8C, while the shortest response time of about 5 s was found at 700 8C. Moreover, analyzing the oxygen gassensing mechanism at various temperatures it can be concluded that at lower temperatures (<800 8C) the oxygen sensitivity and the response time are drastically influenced by the surface reactions, while above this temperature a main influence of bulk processes combined with the formation of the more complex vacancy-related defects can be seen.