TE/TM mode conversion in silicon waveguides using selective stress applying oxide patches and etched oxide windows

Liang, T.K.; Nunes, Luis Romeu; Tsang, Hon Ki; Tsuchiya, Masaharu

doi:10.1109/group4.2005.1516426

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…However, the effect of strain on the shift of resonance wavelength is complex, because the strain not only enhances the EO effect but also changes refractive index, which is known as the photoelastic effect. 6,7) The photoelastic effect has been utilized for pressure sensors, 8) optical polarizing devices, 9,10) and stress sensors on Si wafers. 11) In this study, we focus on the photoelastic effect of Si to clarify the effect of strain on small Si optical devices.…”

Section: Introductionmentioning

confidence: 99%

Photoelastic Effect in Silicon Ring Resonators

Amemiya

Tanushi

Tokunaga

et al. 2008

jjap

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The photoelastic effect of Si was measured in a real optical device, a racetrack ring resonator. The sample holder that can induce strain mechanically was fabricated and the strain dependence of resonance wavelength was investigated. The holder can induce a 10-4 order strain and a 0.1 nm order shift of resonance wavelength induced by this strain was observed. By subtracting the contribution of change in the circumference of the racetrack ring resonator from the resonance wavelength shift, the photoelastic effect was estimated. As a result, the obtained photoelastic coefficient was consistent with that of bulk Si.

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Section: Introductionmentioning

confidence: 99%

Photoelastic Effect in Silicon Ring Resonators

Amemiya

Tanushi

Tokunaga

et al. 2008

jjap

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“…Figure 5 (a) shows the schematic structure of the polarization rotator, and (b) shows the top-view SEM image of the fabricated device structure. A SiO 2 patch was formed along the Si waveguide structure because it is thought that the deposited patch creates a stress field in the waveguide [4]. The stress also causes distribution of a refractive index change in the Si waveguide, so the polarization of input light should be rotated.…”

Section: Polarization Rotatormentioning

confidence: 99%

Silicon-based photonic network devices and materials

et al. 2007

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Silicon photonics technology is expected to be key to high-performance, low-power photonic networks. It is also expected that using Si photonics technology will make it possible to integrate photonic key components, such as optical waveguides, optical switches, polarization rotators, light emitters, and optical gain on Si chip C-MOS devices. We propose approaches to fabricating these key components on Si wafers. That is, we introduce some key technologies; (a) all-optical switching in a Si nanowire waveguide, (b) a Si waveguide polarization rotator, (c) material synthesis and waveguide formation of rare earth-doped SiOx thin-films for Si-based light emitters, and (d) a technique for fabricating nano-structured III-V semiconductors, such as Sb-based quantum dot structures, on Si wafers. We also propose a concept for applying Si photonics, i.e., a way to use Si photonics in information and communications technology (ICT).

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TE/TM mode conversion in silicon waveguides using selective stress applying oxide patches and etched oxide windows

Abstract: We demonstrate TE/TM mode conversion in silicon waveguides. The application of stress by oxide patches and etched oxide windows respectively enabled over 40% polarization conversion and allowed operation over a wide wavelength range.

Cited by 2 publications

References 6 publications

Photoelastic Effect in Silicon Ring Resonators

Photoelastic Effect in Silicon Ring Resonators

Silicon-based photonic network devices and materials

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