Te doping effects on the ferromagnetic performance of the MnGe/Si quantum dots grown by ion beam sputtering deposition

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

“…The peaks at 31.15 and 32.78 eV correspond to Ge 2+ and Ge 4+ , respectively, due to surface oxidation. 19,20,22 The peaks for +4 or even a higher valence of Ge have been mentioned in several types of research studies about Mn x Ge 1−x materials, which can be attributed to the interaction between Ge atoms and Mn atoms during the sputtering process. 19,38,47 Thus, the appearance of the Ge−Ge bond and +4 valence of Ge demonstrate that the quantum dots deposited on the graphene substrate are mainly constructed by the Ge atoms and Mn atoms.…”

“…The Ge 3d 5/2 and Ge 3d 3/2 peaks appear at 29.70 and 30.28 eV, respectively, with a splitting value of 0.58 eV and an approximate peak area ratio of 3:2. The peaks at 31.15 and 32.78 eV correspond to Ge 2+ and Ge 4+ , respectively, due to surface oxidation. ,, The peaks for +4 or even a higher valence of Ge have been mentioned in several types of research studies about Mn x Ge 1– x materials, which can be attributed to the interaction between Ge atoms and Mn atoms during the sputtering process. ,, Thus, the appearance of the Ge–Ge bond and +4 valence of Ge demonstrate that the quantum dots deposited on the graphene substrate are mainly constructed by the Ge atoms and Mn atoms. The combination of Ge 4+ and Mn 2+ facilitates the formation of a p-type semiconductor through low-valence state substitutional doping of a high-valence state.…”

“…18 temperature spintronic devices based on mainstream silicon technology. 19,20 Gao et al studied the effect of Co ion implantation on Ge 1−x Mn x films. 21 Wu et al prepared doublelayered Mn x Ge 1−x Te polycrystalline films by introducing a Si space layer, enhancing the magnetic properties of Mn x Ge 1−x Te.…”

“…Duan et al utilized ion beam sputtering deposition (IBSD) technology to fabricate uniformly aligned Mn x Ge 1– x QDs with a Curie temperature of 383 K. The introduction of Te doping resulted in a 4.3-fold increase in saturation magnetization and a 7.9-fold increase in residual magnetization, providing an effective strategy for enhancing and modulating ferromagnetism in Mn x Ge 1– x DMSs. This achievement established a robust foundation for realizing room temperature spintronic devices based on mainstream silicon technology. , Gao et al studied the effect of Co ion implantation on Ge 1– x Mn x films . Wu et al prepared double-layered Mn x Ge 1– x Te polycrystalline films by introducing a Si space layer, enhancing the magnetic properties of Mn x Ge 1– x Te .…”