2022 13th International Conference on Computing Communication and Networking Technologies (ICCCNT) 2022
DOI: 10.1109/icccnt54827.2022.9984597
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TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On Insulator MOSFET for Digital Applications

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“…New circuitry was added to the design of the original comparator, which helps to speed up the active comparator at low-level supply voltages [6][7][8][9].Four different three-stage comparator circuit topologies have been compared in this paper. Circuits with and without lector methods, three-stage comparator circuits, and altered variations of these circuits are also included in the comparison [10][11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…New circuitry was added to the design of the original comparator, which helps to speed up the active comparator at low-level supply voltages [6][7][8][9].Four different three-stage comparator circuit topologies have been compared in this paper. Circuits with and without lector methods, three-stage comparator circuits, and altered variations of these circuits are also included in the comparison [10][11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%