TCAD modeling of charge transport in HV-IC encapsulation materials

Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, A.; Baccarani, G.; Nguyen, Luu; Denison, M.

doi:10.1109/ispsd.2014.6856073

Cited by 12 publications

(6 citation statements)

References 7 publications

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“…In this investigation, the electrical field of the oxide-nitride passivation later at the gate edge on the drain side exhibited a higher peak field (figure 8) compared with the oxide-(a-Si: H)-oxide-(a-Si: H)-nitride passivation structure, which is another reason for the breakdown degradation. The localized mobile ions on the passivation layer distorted the electrical field distribution of the device [19].…”

Section: Resultsmentioning

confidence: 99%

An innovative TCAD simulated UHV-PLDMOS device with improved HTRB performance

Song¹,

Kumar²,

Reddy³

et al. 2020

Semicond. Sci. Technol.

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This study proposed an innovative TCAD simulated ultra-high voltage p-type laterally diffused metal oxide semiconductor device structure with metal II field plate optimization (metal II is the second metal used on top of metal I with 10 000 Å Oxide dielectric in between as shown in figure 1), which could improve high-temperature reverse-bias (HTRB) performance. By optimizing the metal II field plate position, the exposed area could be minimized, and furthermore, after using the passivation layer of oxide-(a-Si: H)-oxide-(a-Si: H)-nitride after stress, the hole trap concentration was much lower than that in the silicon nitride and silicon dioxide passivation region because of the low mobility of (a-Si: H), which was 1 cm 2 v −1 s −1 . The new passivation layer maintained the original p-drift reduced surface field (RESURF) doping profile and exhibited less degradation in terms of losing positive ions from the p RESURF channel crossing oxide and entering the traps. The five layers exhibited fewer traps; therefore, the degradation was improved. The reliability of the device could be increased by changing the doping concentration of the drift region according to the RESURF principle. In addition, this study compared two passivation layers of (oxide-silicon nitride) and five passivation layers of oxide-(a-Si: H)-oxide-(a-Si: H)-nitride.

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Section: Resultsmentioning

confidence: 99%

An innovative TCAD simulated UHV-PLDMOS device with improved HTRB performance

Song¹,

Kumar²,

Reddy³

et al. 2020

Semicond. Sci. Technol.

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“…The permittivity ε' and loss factor ε'' have been measured for frequencies f from 10 -2 to 10 6 Hz at 60 °C. In EMCs, the dielectric spectra generally show the effect of epoxy/filler interfacial polarization (ε' at low f), the material conductivity (ε'' at low f), and the dipolar relaxation times (ε'' peaks) [2,17]. Moisture influences the dielectric properties of EMCs in different ways [9,18].…”

Section: Dielectric Spectroscopymentioning

confidence: 99%

“…Recently, epoxy-based polymers with a large fraction of insulating fillers have been proposed to decrease moisture permeability and suppress thermal expansion in order to avoid corrosion and exfoliation during high-temperature cycles [1]. In addition, the electrical conductivity is known to be source of charge spreading [2,3]. More specifically, high-voltage lateral devices, like, e.g., double-diffused DMOS (LDMOS) transistors, are based on the Reduced Surface Field (RESURF) principle [4] to significantly improve the breakdown voltage.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture

Cornigli

Reggiani

Gnudi

et al. 2018

Microelectronics Reliability

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“…It is thus extremely important to measure wet EMCs in similar conditions also in test chips where the charge transport in EMCs directly influences devices underneath. In previous works [6], [7], dedicated test structures made by integrated charge sensors have been manufactured to directly measure the amount of space charge accumulated in the EMC. The main interest was to monitor the charge spreading in the center of an IC.…”

Section: Introductionmentioning

confidence: 99%

Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs

Balestra,

Gnani,

Rossetti

et al. 2024

IEEE Trans. Electron Devices

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The reliability of high-voltage (HV) integrated circuits (ICs) can be significantly affected by space charge accumulation at the interface between the passivation layer and the epoxy molding compound (EMC) which acts as encapsulation material. The incorporation of moisture, which significantly increases the EMC conductivity, can lead to a stronger distortion of the electric field with a consequent breakdown instability. Moreover, the distance of the integrated-circuit active regions from the peripheral bond pads and wire would require a thorough optimization. To investigate the role played by the EMC under such conditions, a dedicated test chip made by an array of charge sensors covering short distances from bon-pads has been manufactured. A novel technique has been used to estimate the amount of space charge in the EMC independent of the bias applied to the bond pads. The outcome of the experiments has been explained by performing 2-D TCAD simulations of the structure under investigation which accurately account for the charge transport mechanisms of the EMC.

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TCAD modeling of charge transport in HV-IC encapsulation materials

Cited by 12 publications

References 7 publications

An innovative TCAD simulated UHV-PLDMOS device with improved HTRB performance

An innovative TCAD simulated UHV-PLDMOS device with improved HTRB performance

Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture

Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs

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