2004
DOI: 10.1016/j.surfcoat.2003.10.007
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Target poisoning during reactive magnetron sputtering: Part II: the influence of chemisorption and gettering

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Cited by 74 publications
(30 citation statements)
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“…3(d) has a dense columnar structure and less thickness than the other films, which is consistent with the decrease of the sputtering yield. The target surface was poisoned and the compound formation results in a decreased target erosion rate [45,46].…”
Section: Films Compositionmentioning
confidence: 99%
“…3(d) has a dense columnar structure and less thickness than the other films, which is consistent with the decrease of the sputtering yield. The target surface was poisoned and the compound formation results in a decreased target erosion rate [45,46].…”
Section: Films Compositionmentioning
confidence: 99%
“…When a reactive gas, for example O 2 or N 2 , is introduced to the chamber it is likely to react with the target surface by chemisorption and reactive ion implantation, and with the sputtered target material at the substrate as well as with the chamber walls, forming a compound. [59,60] The compound film formation at the target surface is known as target poisoning. [61] The transition between the metallic and poisoned target surface conditions is often observed as sudden changes in the cathode voltage and current, gas pressure, and deposition rate.…”
Section: Reactive Hipimsmentioning
confidence: 99%
“…The introduction of HIPIMS in the coating deposition stage in reactive mode however requires careful consideration of the target poisoning effect. Target poisoning is an old problem in PVD technology and extensive research as well as progress has been achieved over the years in understanding, modelling and controlling the process [18,19,20]. However it is fair to say that the effects related to target poisoning in HIPIMS are still not very well studied and understood [21,22].…”
Section: Introductionmentioning
confidence: 99%