Tapered Optical Fibers Coated with Rare-Earth Complexes for Quantum Applications

Mor, Ori Ezrah; Ohana, Tal; Borne, Adrien; Diskin‐Posner, Yael; Asher, Maor; Yaffe, Omer; Shanzer, Abraham; Dayan, Barak

doi:10.1021/acsphotonics.2c00330

Cited by 4 publications

(2 citation statements)

References 53 publications

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“…It would be also interesting to study Yb 3+ and Er 3+ complexes that emit in the near-infra-red region because such complexes are useful for realizing molecule-based quantum communication architectures. , Two recent reports elucidate narrow optical linewidths associated with Yb 3+ complexes, , implying the utility of Ln 3+ complexes for creating coherent light–matter interfaces with quantum technological implications.…”

Section: Results and Discussionmentioning

confidence: 99%

Observation of Narrow Optical Homogeneous Linewidth and Long Nuclear Spin Lifetimes in a Prototypical [Eu(trensal)] Complex

Kumar

Vasilenko

et al. 2023

J. Phys. Chem. C

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Coherent light−matter interfaces are key elements for many quantum information processing architectures. Rare-earth ion (REI)-containing systems featuring narrow inter-configurational f−f transitions are suitable for creating such interfaces. Recently, narrow homogeneous linewidths (Γ h ) and long nuclear spin lifetimes (T 1spin ) associated with two Eu 3+ complexes featuring the 5 D 0 → 7 F 0 f−f transition have been reported, elucidating that REI-molecule-based coherent light−matter interfaces can be obtained. In this study, we report a homogeneous linewidth of 2.8 MHz at 4.2 K, corresponding to an optical coherence lifetime (T 2opt ) of 114 ns (0.11 μs), associated with the 5 D 0 → 7 F 0 transition of the prototypical charge neutral Eu 3+ complex�[Eu(trensal)]. Moreover, we have observed long nuclear spin lifetimes (T 1spin ) up to 460 ± 80 s at 4.2 K for the complex and efficient optical pumping of hyperfine levels of the 5 D 0 ground state. The results presented in this study indicate that narrow homogeneous linewidths and long nuclear spin lifetimes could be a generic property of molecular Eu 3+ complexes featuring the 5 D 0 → 7 F 0 transition.

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Section: Results and Discussionmentioning

confidence: 99%

Observation of Narrow Optical Homogeneous Linewidth and Long Nuclear Spin Lifetimes in a Prototypical [Eu(trensal)] Complex

Kumar

Vasilenko

et al. 2023

J. Phys. Chem. C

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“…The efficient emission of Er 3+ at 1550 nm improves data transmission in the C-band (1530 and 1565 nm) [202,203]. It was shown that tapered optical fibres coated with rare earth complexes could find quantum applications [204]. Lanthanoids also have a fundamental role in lasers.…”

Section: Luminescencementioning

confidence: 99%

Rare Earths—The Answer to Everything

Behrsing,

Blair,

Jaroschik

et al. 2024

Molecules

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Rare earths, scandium, yttrium, and the fifteen lanthanoids from lanthanum to lutetium, are classified as critical metals because of their ubiquity in daily life. They are present in magnets in cars, especially electric cars; green electricity generating systems and computers; in steel manufacturing; in glass and light emission materials especially for safety lighting and lasers; in exhaust emission catalysts and supports; catalysts in artificial rubber production; in agriculture and animal husbandry; in health and especially cancer diagnosis and treatment; and in a variety of materials and electronic products essential to modern living. They have the potential to replace toxic chromates for corrosion inhibition, in magnetic refrigeration, a variety of new materials, and their role in agriculture may expand. This review examines their role in sustainability, the environment, recycling, corrosion inhibition, crop production, animal feedstocks, catalysis, health, and materials, as well as considering future uses.

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Approaching scalable quantum memory with integrated atomic devices

Jing,

Wei,

Zhang

et al. 2024

Applied Physics Reviews

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Quantum memory, which maps photonic quantum information into a stationary medium and retrieves it at a chosen time, plays a vital role in the advancement of quantum information science. In particular, the scalability of a quantum memory is a central challenge for quantum network that can be overcome by using integrated devices. Quantum memory with an integrated device is highly appealing since it not only expands the number of memories to increase data rates, but also offers seamless compatibility with other on-chip devices and existing fiber network, enabling scalable and convenient applications. Over the past few decades, substantial efforts have been dedicated to achieving integrated quantum memory using rare earth ions doped solid-state materials, color centers, and atomic gases. These physical platforms are the primary candidates for such devices, where remarkable advantages have been demonstrated in achieving high-performance integrated quantum memory, paving the way for efficiently establishing robust and scalable quantum network with integrated quantum devices. In this paper, we aim to provide a comprehensive review of integrated quantum memory, encompassing its background and significance, advancement with bulky memory system, fabrication of integrated device, and its memory function considering various performance metrics. Additionally, we will address the challenges associated with integrated quantum memory and explore its potential applications. By analyzing the current state of the field, this review will make a valuable contribution by offering illustrative examples and providing helpful guidance for future achievements in practical integrated quantum memory.

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Tapered Optical Fibers Coated with Rare-Earth Complexes for Quantum Applications

Cited by 4 publications

References 53 publications

Observation of Narrow Optical Homogeneous Linewidth and Long Nuclear Spin Lifetimes in a Prototypical [Eu(trensal)] Complex

Observation of Narrow Optical Homogeneous Linewidth and Long Nuclear Spin Lifetimes in a Prototypical [Eu(trensal)] Complex

Rare Earths—The Answer to Everything

Approaching scalable quantum memory with integrated atomic devices

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