1996
DOI: 10.1016/s0040-6090(96)08975-4
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Tantalum pentoxide for advanced DRAM applications

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Cited by 82 publications
(44 citation statements)
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“…It is used in optical waveguides [4], antireflection coatings [5], MOS devices [6][7], DRAM [8], and for the fabrication of wavelength-stable diode lasers for high-density wavelength division multiplexing (DWDM) [9]. Nanoparticles of Ta 2 O 5 are efficient photocatalysts for decomposition of organics [10], and doped ternary oxides containing Ta 5+ ion such as MTaO 4 (M = Bi, In) are efficient photocatalysts for splitting of water to form hydrogen [11].…”
Section: Introductionmentioning
confidence: 99%
“…It is used in optical waveguides [4], antireflection coatings [5], MOS devices [6][7], DRAM [8], and for the fabrication of wavelength-stable diode lasers for high-density wavelength division multiplexing (DWDM) [9]. Nanoparticles of Ta 2 O 5 are efficient photocatalysts for decomposition of organics [10], and doped ternary oxides containing Ta 5+ ion such as MTaO 4 (M = Bi, In) are efficient photocatalysts for splitting of water to form hydrogen [11].…”
Section: Introductionmentioning
confidence: 99%
“…Tantalum oxide is used not only because of its ability to function as a valve metal, but also because its semiconductor properties have also been widely investigated (band gap energy 4.3 eV) [11]. The use of ceramic films consisting of RuO 2 and Ta 2 O 5 has found many applications, specially in the technological field and electronic industry, where solid state sensors, dynamic memory capacitors, hybrid capacitors, and MOS (metal/oxide/semiconductor) transistors are of great interest [10][11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%
“…The use of ceramic films consisting of RuO 2 and Ta 2 O 5 has found many applications, such as solid state sensors, dynamic memory capacitors, hybrid capacitors, supercapacitors, and MOS (metal/oxide/semiconductor) transistors [1][2][3][4][5][6]. Moreover, the RuO 2 -Ta 2 O 5 system has recently been investigated by us [4], and we observed that it is much more stable than RuO 2 -TiO 2 under galvanostatic conditions [7,8].…”
Section: Introductionmentioning
confidence: 99%