Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process

Abstract. The temperature-handling capability of diamond diode and field effect transistor structures is discussed and compared with recent results on GaN. The main parameters limiting the high-temperature performance are identified and evaluated. A diamond high-temperature technology is presented which has allowed 1000 OC operation of a diamond Schottky diode, the highest temperature of operation of any semiconductor diode yet.

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Devices at High Temperatures—Status and Prospects

Kohn

Ebert

Vescan

1998

Israel Journal of Chemistry

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Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process

Cited by 1 publication

References 16 publications

Devices at High Temperatures—Status and Prospects

Devices at High Temperatures—Status and Prospects

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