Tailoring the magnetic properties of galfenol film grown on single-crystal diamond

Zhang, Zilong; Sang, Liwen; Huang, Jian; Wang, Linjun; Koizumi, Satoshi; Liao, Meiyong

doi:10.1016/j.jallcom.2020.157683

Cited by 12 publications

(2 citation statements)

References 50 publications

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“…In the past 10-20 years, the progress of semiconductor materials has created many updated science technologies, such as 5G communication, artificial intelligence, quantum information, and power devices. Of all the semiconductor materials, diamond possesses a wide band gap (5.5 eV), high thermal conductivity (2200 W/mK), high breakdown voltage (10 MV/cm), high carriers' mobility, high saturation velocity of holes (1.5 × 10 7 cm/s), and high Johnson's and Baliga's figure of merit, making it a promising semiconductor material for next-generation devices [1][2][3][4][5][6][7][8]. However, the existence of defects located in diamond substrates leads to a reduction in the material properties.…”

Section: Introductionmentioning

confidence: 99%

Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

et al. 2022

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A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm3 high-pressure, high-temperature (001) diamond substrate was cut into four pieces with controlled experiments. The deposition of tungsten-incorporated diamond changed the atomic arrangement of the original diamond defects so that the propagation of internal dislocations could be inhibited. The SEM images showed that the etching pits density was significantly decreased from 2.8 × 105 cm−2 to 2.5 × 103 cm−2. The reduction of XRD and Raman spectroscopy FWHM proved that the double-layer tungsten-incorporated diamond has a significant effect on improving the crystal quality of diamond bulk. These results show the evident impact of in situ tungsten-incorporated growth on improving crystal quality and inhibiting the dislocations propagation of homoepitaxial diamond, which is of importance for high-quality diamond growth.

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Section: Introductionmentioning

confidence: 99%

Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

et al. 2022

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“…To achieve a good high frequency permeability, the material should possess low coercivity (H c ) and a high remanence ratio (M r /M s ), which is used in high-frequency applications [11,12]. The FeGa/Magnetic heterostructures such as FeGa/FeNi [18], FeGa/Mn [19], Fe 75.5 Cu 1 Nb 3 Si 13.5 B 7 /FeGa [20], FeGa/Cu [21], FeGa/Ta [22], FeGa/diamond [23], and FeGa/ZnSe [11] were used to improve the soft magnetic properties through the interfacial interaction, the number of layers, and their thicknesses. For the heterostructure of hard and soft ferromagnets in films, a strong exchange spring magnetism assumes the responsibility of explaining the enhanced static and dynamic magnetic properties.…”

Section: Introductionmentioning

confidence: 99%

Magnetic Properties Regulation of FeGa and FeGaNi Films with Oblique Magnetron Sputtering

2022

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Magnetic FeGa and FeGaNi films with an in-plane anisotropy were deposited by employing oblique magnetron sputtering. With the increase in oblique angle, the crystallite size of FeGa decreases, which indicates that oblique sputtering can refine the crystallite size. The remanence ratio of FeGa films increases from 0.5 to 0.92 for an easy axis, and the coercivity increases with the decrease in the crystallite size. The calculated static anisotropic field shows that the in-plane magnetic anisotropy can be induced by oblique sputtering and the strength increases with the oblique sputtering angle. After doping Ni by co-sputtering, FeGaNi films exhibit a stable remanence ratio at 0.8, low coercivity and good anisotropy. With the low sputtering power of the Ni target, there is a competitive relationship between the effect of crystallite size and Ni doping which causes the coercivity of FeGaNi films to first increase and then decrease with the increase in the oblique angle. The FeGaNi film also shows high anisotropy in a small oblique angle. The variation of coercivity and anisotropy of FeGaNi films can be explained by the crystalline size effect and increase in Ni content. For the increasing intensity of collisions between FeGa and Ni atoms in the co-sputtering, the in-plane magnetic anisotropy increases first and then decreases. As a result, the magnetic properties of FeGa films were examined to tailor their magnetic softness and magnetic anisotropy by controlling the oblique sputtering angle and Ni doping.

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Single-Crystal Diamond MEMS Magnetic Sensor

Zhang,

Liao

2024

Topics in Applied Physics

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Tailoring the magnetic properties of galfenol film grown on single-crystal diamond

Cited by 12 publications

References 50 publications

Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

Magnetic Properties Regulation of FeGa and FeGaNi Films with Oblique Magnetron Sputtering

Single-Crystal Diamond MEMS Magnetic Sensor

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