Tailoring the defects and carrier density for beyond 10% efficient CZTSe thin film solar cells

Li, Jianjun; Kim, SeongYeon; Nam, Dahyun; Liu, Xiaoru; Kim, Junho; Cheong, Hyeonsik; Liu, Wei; Li, Hui; Sun, Yun; Zhang, Yi

doi:10.1016/j.solmat.2016.09.034

Cited by 136 publications

(108 citation statements)

References 31 publications

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“…Figure shows the Raman spectra of CZTSe samples treated by AS vapor for 0, 5, 25, and 60 min. The Raman peaks of all samples are at approximately 169, 192, and 230 cm −1 , which belong to the B mode, A mode, and E mode of CZTSe, respectively . The Raman peaks of CZTSe samples near 169 and 192 cm −1 treated by AS vapor for 25 and 60 min are shifted toward higher wave number relative to those of pure CZTSe sample, which indicates that sulfur has been doped into the lattice of the CZTSe.…”

Section: Resultsmentioning

confidence: 93%

Room‐Temperature Surface Sulfurization for High‐Performance Kesterite CZTSe Solar Cells

et al. 2018

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The interfaces are very important for kesterite‐structured solar cells. In this study, a facile room temperature chemical sulfurization process is developed to modify the surface of the CZTSe films, which can prevent the decomposition of kesterite film at high temperature during the traditional sulfurization process and thus introducing the deep defects in the absorber layer. It is found that the (NH4)2S vapor sulfurizes the surfaces of the CZTSe thin films previously etched by ammonia. Consequently, the surface defects are passivated by the incorporated sulfur, and the interfacial band alignment is improved at the junction. The open circuit voltage (VOC) of the solar cell device is improved from 364 mV to 406 mV, with the cell efficiency increased to 9.04% when the (NH4)2S vapor treatment time is optimized at 25 min. This study affords a new perspective for enhancing the performance of kesterite‐based thin film solar cells using a facile surface sulfurization approach.

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Section: Resultsmentioning

confidence: 93%

Room‐Temperature Surface Sulfurization for High‐Performance Kesterite CZTSe Solar Cells

et al. 2018

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“…Nevertheless, the intrinsic point defects become more harmful with higher substitution of Mn for Zn. On the other hand, the intensity of Raman peak at around 230 cm −1 decreases with the increasing of Zn content . Thus, the CZTSSe doping with 5% Mn absorber surface is more Zn‐rich that the detrimental [2Cu Zn +Sn Zn ] defect cluster are reduced compared with the pure‐CZTSSe absorber surface.…”

Section: Resultsmentioning

confidence: 98%

Efficient Optimization of the Performance of Mn²⁺‐Doped Kesterite Solar Cell: Machine Learning Aided Synthesis of High Efficient Cu₂(Mn,Zn)Sn(S,Se)₄ Solar Cells

Hou

Gao

et al. 2018

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Isoelectronic cation substitution is a potential method to decrease the density of Cu‐Zn anti‐site defects in CZTSSe, thus improving the VOC and performance of CZTSSe solar cells. The proper doping concentration is determined traditionally by the trial and error approach, costing much time, and materials. How to shorten the time to find the proper doping concentration is a big challenge for the development of solar cells. Here, by utilizing the machine learning model, the authors carry out an adaptive design for predicting the optimal doping ratio of Mn2+ ions in CZTSSe solar cells for improved solar cell efficiency. With the help of machine learning prediction, the authors rapidly and efficiently find the optimal doping ratio of Mn2+ in CZTSSe solar cells to be 0.05, achieving a highest solar cell efficiency of 8.9% in experiment. Further experimental characterizations of Mn‐doped CZTSSe show that the defect in CZTSSe after Mn doping is changed from an anti‐site CuZn defect to VCu defect. Our findings suggest that machine learning is a very powerful and efficient approach to aid the development of solar cell materials for its application in the photovoltaic field.

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“…It is well known that the Se-containing kesterite solar cells present less V OC deficit than that of pure sulfide [82,83], which could possibly be attributed to the higher formation energy of Cu-Zn antisite defects in selenide kesterite [84]. In this case, the amount of Cd substitution can be controlled in a lower amount to obtain fewer antisite defects.…”

Section: Cadmium (Cd)mentioning

confidence: 99%

Doping and alloying of kesterites

et al. 2019

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Attempts to improve the efficiency of kesterite solar cells by changing the intrinsic stoichiometry have not helped to boost the device efficiency beyond the current record of 12.6%. In this light, the addition of extrinsic elements to the Cu 2 ZnSn(S,Se) 4 matrix in various quantities has emerged as a popular topic aiming to ameliorate electronic properties of the solar cell absorbers. This article reviews extrinsic doping and alloying concepts for kesterite absorbers with the focus on those that do not alter the parent zinc-blende derived kesterite structure. The latest state-of-the-art of possible extrinsic elements is presented in the order of groups of the periodic table. The highest reported solar cell efficiencies for each extrinsic dopant are tabulated at the end. Several dopants like alkali elements and substitutional alloying with Ag, Cd or Ge have been shown to improve the device performance of kesterite solar cells as compared to the nominally undoped references, although it is often difficult to differentiate between pure electronic effects and other possible influences such as changes in the crystallization path, deviations in matrix composition and presence of alkali dopants coming from the substrates. The review is concluded with a suggestion to intensify efforts for identifying intrinsic defects that negatively affect electronic properties of the kesterite absorbers, and, if identified, to test extrinsic strategies that may compensate these defects. Characterization techniques must be developed and widely used to reliably access semiconductor absorber metrics such as the quasi-Fermi level splitting, defect concentration and their energetic position, and carrier lifetime in order to assist in search for effective doping/alloying strategies.

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Tailoring the defects and carrier density for beyond 10% efficient CZTSe thin film solar cells

Cited by 136 publications

References 31 publications

Room‐Temperature Surface Sulfurization for High‐Performance Kesterite CZTSe Solar Cells

Room‐Temperature Surface Sulfurization for High‐Performance Kesterite CZTSe Solar Cells

Efficient Optimization of the Performance of Mn²⁺‐Doped Kesterite Solar Cell: Machine Learning Aided Synthesis of High Efficient Cu₂(Mn,Zn)Sn(S,Se)₄ Solar Cells

Doping and alloying of kesterites

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Tailoring the defects and carrier density for beyond 10% efficient CZTSe thin film solar cells

Cited by 136 publications

References 31 publications

Room‐Temperature Surface Sulfurization for High‐Performance Kesterite CZTSe Solar Cells

Room‐Temperature Surface Sulfurization for High‐Performance Kesterite CZTSe Solar Cells

Efficient Optimization of the Performance of Mn2+‐Doped Kesterite Solar Cell: Machine Learning Aided Synthesis of High Efficient Cu2(Mn,Zn)Sn(S,Se)4 Solar Cells

Doping and alloying of kesterites

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Efficient Optimization of the Performance of Mn²⁺‐Doped Kesterite Solar Cell: Machine Learning Aided Synthesis of High Efficient Cu₂(Mn,Zn)Sn(S,Se)₄ Solar Cells