2022
DOI: 10.1016/j.jmst.2021.09.014
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Tailoring of structural, optical and electrical properties of anatase TiO2 via doping of cobalt and nitrogen ions

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Cited by 30 publications
(12 citation statements)
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“…Figure a shows the DOS plot for (Co, N)-codoped TiO 2 , which indicates the presence of unoccupied states at the mid gap position (at 1.75 eV above the VBM) and close to the CBM (at 0.07 eV below the CBM). This supports the statement of Sharma et al related to the presence of isolated intermediate states in the forbidden region due to codoping with Co and N . It can be noted that the partially unoccupied states as observed in cases of Co–TiO 2 are now fully unoccupied.…”
Section: Resultssupporting
confidence: 90%
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“…Figure a shows the DOS plot for (Co, N)-codoped TiO 2 , which indicates the presence of unoccupied states at the mid gap position (at 1.75 eV above the VBM) and close to the CBM (at 0.07 eV below the CBM). This supports the statement of Sharma et al related to the presence of isolated intermediate states in the forbidden region due to codoping with Co and N . It can be noted that the partially unoccupied states as observed in cases of Co–TiO 2 are now fully unoccupied.…”
Section: Resultssupporting
confidence: 90%
“…Immense interest has been shown in band gap engineering for oxide-based semiconductor materials involving N as a dopant element due to the well-established synthetic strategy. In a recent experimental study, Sharma et al reported a significant decrease in band gap narrowing due to codoping of (Co, N) into TiO 2 . However, there is no theoretical study until now in the existing literature.…”
Section: Resultsmentioning
confidence: 99%
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